公开(公告)号：US06387747B1

公开(公告)日：2002-05-14

申请号：US09867561

申请日：2001-05-31

申请人： Randall Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Chua Chee Tee

发明人： Randall Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Chua Chee Tee

IPC分类号： H01L218244

CPC分类号： H01L28/10 ,  H01L23/5227 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for forming an RF inductor of helical shape having high Q and minimum area. The inductor is fabricated of metal or damascened linear segments formed on three levels of intermetal dielectric layers and interconnected by metal filled vias to form the complete helical shape with electrical continuity.

摘要翻译： 一种形成具有高Q值和最小面积的螺旋形RF电感器的方法。 电感器由形成在三层金属间电介质层上并由金属填充的通孔相互连接形成具有电连续性的完整螺旋形状的金属或镶嵌的线性段制成。

公开(公告)号：US06492242B1

公开(公告)日：2002-12-10

申请号：US09609447

申请日：2000-07-03

申请人： Alex See ,  Cher Liang Randall Cha ,  Shyuz Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

发明人： Alex See ,  Cher Liang Randall Cha ,  Shyuz Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/31683

摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.

摘要翻译： 在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化， 已经开发 该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。 激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度 。 第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域， 通过覆盖光刻板中的透明区域。 该过程还导致在下面的金属层的顶部上形成高K层。

公开(公告)号：US06764914B2

公开(公告)日：2004-07-20

申请号：US10290130

申请日：2002-11-07

申请人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

发明人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/31683

摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.

摘要翻译： 在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化， 已经开发 该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。 激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度 。 第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域， 通过覆盖光刻板中的透明区域。 该过程还导致在下面的金属层的顶部上形成高K层。

公开(公告)号：US06284590B1

公开(公告)日：2001-09-04

申请号：US09726655

申请日：2000-11-30

申请人： Randall Cher Liang Cha ,  Cheng Yeow Ng ,  Shao-Fu Sanford Chu ,  Tae Jong Lee ,  Chua Chee Tee

发明人： Randall Cher Liang Cha ,  Cheng Yeow Ng ,  Shao-Fu Sanford Chu ,  Tae Jong Lee ,  Chua Chee Tee

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/32139 ,  H01L28/60 ,  Y10S438/957

摘要： A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A first metal layer is deposited over the insulating layer. A capacitor dielectric layer is deposited overlying the first metal layer. A second metal layer is deposited overlying the capacitor dielectric layer and patterned to form a top metal electrode. A flowable material layer is deposited overlying the capacitor dielectric and the top metal electrode and anisotropically etched away to leave spacers on sidewalls of the top metal electrode. A photoresist mask is formed overlying the capacitor dielectric and the top metal electrode wherein the spacers provide extra photoresist thickness at the sidewalls of the top metal layer. The capacitor dielectric layer and the first metal layer are patterned wherein the patterned first metal layer forms a bottom metal electrode and wherein the spacers protect the top metal layer from etching during the patterning. The photoresist mask is removed, completing fabrication of a metal-insulator-metal capacitor.

摘要翻译： 描述了一种用于制造金属 - 绝缘体 - 金属电容器的方法，其中消除了图案化期间的顶部金属角成形。 绝缘层设置在半导体衬底上。 第一金属层沉积在绝缘层上。 沉积在第一金属层上的电容器电介质层。 将第二金属层沉积在电容器介电层上并被图案化以形成顶部金属电极。 将可流动材料层沉积在电容器电介质和顶部金属电极上，并各向异性地蚀刻掉，以在顶部金属电极的侧壁上留下间隔物。 形成覆盖电容器电介质和顶部金属电极的光致抗蚀剂掩模，其中间隔物在顶部金属层的侧壁处提供额外的光致抗蚀剂厚度。 电容器电介质层和第一金属层被图案化，其中图案化的第一金属层形成底部金属电极，并且其中间隔件在图案化期间保护顶部金属层不被蚀刻。 去除光致抗蚀剂掩模，完成金属 - 绝缘体 - 金属电容器的制造。