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公开(公告)号:US5874368A
公开(公告)日:1999-02-23
申请号:US942996
申请日:1997-10-02
申请人: Ravi Kumar Laxman , David Allen Roberts , Arthur Kenneth Hochberg , Herman Gene Hockenhull , Felicia Diane Kaminsky
发明人: Ravi Kumar Laxman , David Allen Roberts , Arthur Kenneth Hochberg , Herman Gene Hockenhull , Felicia Diane Kaminsky
IPC分类号: C07F7/02 , C23C16/34 , H01L21/318
CPC分类号: H01L21/02222 , C23C16/345 , H01L21/0217 , H01L21/02271 , H01L21/3185
摘要: A process for the low pressure chemical vapor deposition of silicon nitride from ammonia and a silane of the formula: (t-C.sub.4 H.sub.9 NH).sub.2 SiH.sub.2 provides improved properties of the resulting film for use in the semiconductor industry.
摘要翻译: 用于氨的氮化硅的低压化学气相沉积和式(t-C 4 H 9 N H)2 SiH 2的硅烷的方法提供了用于半导体工业的所得膜的改进的性能。