公开(公告)号：US20250027811A1

公开(公告)日：2025-01-23

申请号：US18476769

申请日：2023-09-28

Applicant: Raytheon Company

Inventor： Micky Harris ,  Angelo Gregory Scott Gilmore

IPC: G01J1/44

Abstract: A pixel disclosed includes an anti-blooming injection transistor (DI) transistor under the control of a BDI amplifier/transistor combination. The “turn on” of the anti-blooming injection transistor is offset from the turn on of the BDI transistor by an offset. When the offset is overcome, excess charge can be diverted (iDiverted) away from an integration capacitor. This can allow the BDI transistor/amplifier combination to hold the detector at nominal bias over an extended range and may reduce blooming. The pixel can be implemented in manner that adds a second transistor and a capacitor to prior BDI designs.

公开(公告)号：US12203808B1

公开(公告)日：2025-01-21

申请号：US18476769

申请日：2023-09-28

Applicant: Raytheon Company

Inventor： Micky Harris ,  Angelo Gregory Scott Gilmore

IPC: G01J1/44

Abstract: A pixel disclosed includes an anti-blooming injection transistor (DI) transistor under the control of a BDI amplifier/transistor combination. The “turn on” of the anti-blooming injection transistor is offset from the turn on of the BDI transistor by an offset. When the offset is overcome, excess charge can be diverted (iDiverted) away from an integration capacitor. This can allow the BDI transistor/amplifier combination to hold the detector at nominal bias over an extended range and may reduce blooming. The pixel can be implemented in manner that adds a second transistor and a capacitor to prior BDI designs.