公开(公告)号：US20150357206A1

公开(公告)日：2015-12-10

申请号：US14297875

申请日：2014-06-06

Applicant: Raytheon Company

Inventor： James W. McClymonds

IPC: H01L21/3213 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L21/32139 ,  H01L27/0629 ,  H01L27/0805 ,  H01L28/40

Abstract: A structure having; a body; a pair of capacitors disposed over different portions of a surface of the body; a first one of the capacitors having an upper conductor and a lower conductor separated a dielectric layer; and a second one of the pair of capacitors having an upper conductor and a lower conductor separated a dielectric structure, the dielectric structure having a lower dielectric layer, and an upper dielectric layer, wherein the material of the lower dielectric layer is different from the material of the upper dielectric layer.

Abstract translation: 具有： 身体; 设置在所述主体的表面的不同部分上的一对电容器; 电容器中的第一个具有分隔介电层的上导体和下导体; 并且所述一对电容器中的第二电容器具有分隔介电结构的上导体和下导体，所述电介质结构具有下电介质层和上电介质层，其中所述下电介质层的材料与所述材料不同 的上介电层。

公开(公告)号：US20210111263A1

公开(公告)日：2021-04-15

申请号：US16599650

申请日：2019-10-11

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  John P. Bettencourt ,  James W. McClymonds ,  Paul M. Alcorn ,  Philip C. Balas, II ,  Michael S. Davis

IPC: H01L29/45 ,  H01L21/283 ,  H01L23/31

Abstract: Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.

公开(公告)号：US11145735B2

公开(公告)日：2021-10-12

申请号：US16599650

申请日：2019-10-11

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  John P. Bettencourt ,  James W. McClymonds ,  Paul M. Alcorn ,  Philip C. Balas, II ,  Michael S. Davis

IPC: H01L29/45 ,  H01L21/283 ,  H01L23/31

Abstract: Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.