公开(公告)号：US11862691B2

公开(公告)日：2024-01-02

申请号：US16671438

申请日：2019-11-01

Applicant: Raytheon Company

Inventor： Michael S. Davis ,  Eduardo M. Chumbes ,  Brian T. Appleton, Jr.

IPC: H01L29/40

CPC classification number: H01L29/402 ,  H01L29/401 ,  H01L29/408

Abstract: A field effect transistor having a field plate structure for shaping an electric field in a region between the gate and the drain, such field plate structure having: a dielectric layer disposed on gate and on the surface of the semiconductor in the region between gate and the drain; and electric charge disposed in portions of the dielectric layer, a portion of such charge being disposed in the dielectric layer over an upper surface of the gate and another portion of the change extending from the upper surface of the gate into the region between gate and the drain; and wherein the electric charge solely produces the electric field.

公开(公告)号：US20210111263A1

公开(公告)日：2021-04-15

申请号：US16599650

申请日：2019-10-11

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  John P. Bettencourt ,  James W. McClymonds ,  Paul M. Alcorn ,  Philip C. Balas, II ,  Michael S. Davis

IPC: H01L29/45 ,  H01L21/283 ,  H01L23/31

Abstract: Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.

公开(公告)号：US11145735B2

公开(公告)日：2021-10-12

申请号：US16599650

申请日：2019-10-11

Applicant: Raytheon Company

Inventor： Paul J. Duval ,  John P. Bettencourt ,  James W. McClymonds ,  Paul M. Alcorn ,  Philip C. Balas, II ,  Michael S. Davis

IPC: H01L29/45 ,  H01L21/283 ,  H01L23/31

Abstract: Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.

公开(公告)号：US20210134965A1

公开(公告)日：2021-05-06

申请号：US16671438

申请日：2019-11-01

Applicant: Raytheon Company

Inventor： Michael S. Davis ,  Eduardo M. Chumbes ,  Brian T. Appleton, JR.

IPC: H01L29/40

Abstract: A field effect transistor having a field plate structure for shaping an electric field in a region between the gate and the drain, such field plate structure having: a dielectric layer disposed on gate and on the surface of the semiconductor in the region between gate and the drain; and electric charge disposed in portions of the dielectric layer, a portion of such charge being disposed in the dielectric layer over an upper surface of the gate and another portion of the change extending from the upper surface of the gate into the region between gate and the drain; and wherein the electric charge solely produces the electric field.