公开(公告)号：US20230219858A1

公开(公告)日：2023-07-13

申请号：US18117825

申请日：2023-03-06

Applicant: Raytheon Technologies Corporation

Inventor： Ying She ,  Rajiv Ranjan ,  Zissis A. Dardas ,  Gajawalli V. Srinivasan ,  Lesia V. Protsailo

IPC: C04B35/80 ,  H01L21/02 ,  C04B35/628 ,  C23C16/455 ,  C23C16/04 ,  C04B35/565 ,  C04B35/515 ,  C01B32/956

CPC classification number: C04B35/80 ,  H01L21/02529 ,  C04B35/62868 ,  C23C16/45544 ,  C23C16/045 ,  C04B35/565 ,  C04B35/515 ,  C01B32/956 ,  C04B2235/614

Abstract: A method for fabricating a component according to an example of the present disclosure includes the steps of depositing a stoichiometric precursor layer onto a preform, and densifying the preform by depositing a matrix material onto the stoichiometric precursor layer. An alternate method and a component are also disclosed.

公开(公告)号：US11597686B2

公开(公告)日：2023-03-07

申请号：US17025544

申请日：2020-09-18

Applicant: Raytheon Technologies Corporation

Inventor： Ying She ,  Rajiv Ranjan ,  Zissis A. Dardas ,  Gajawalli V. Srinivasan ,  Lesia V. Protsailo

IPC: C23C16/04 ,  C04B35/80 ,  C23C16/455 ,  H01L21/02 ,  C04B35/628 ,  C04B35/565 ,  C04B35/515 ,  C01B32/956

Abstract: A method for fabricating a component according to an example of the present disclosure includes the steps of depositing a stoichiometric precursor layer onto a preform, and densifying the preform by depositing a matrix material onto the stoichiometric precursor layer. An alternate method and a component are also disclosed.

公开(公告)号：US20210002766A1

公开(公告)日：2021-01-07

申请号：US17025544

申请日：2020-09-18

Applicant: Raytheon Technologies Corporation

Inventor： Ying She ,  Rajiv Ranjan ,  Zissis A. Dardas ,  Gajawalli V. Srinivasan ,  Lesia V. Protsailo

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/04 ,  C04B35/628 ,  C04B35/565

Abstract: A method for fabricating a component according to an example of the present disclosure includes the steps of depositing a stoichiometric precursor layer onto a preform, and densifying the preform by depositing a matrix material onto the stoichiometric precursor layer. An alternate method and a component are also disclosed.