公开(公告)号：US06255125B1

公开(公告)日：2001-07-03

申请号：US09277093

申请日：1999-03-26

申请人： Regina T. Schmidt ,  Christopher A. Spence ,  Anna M. Minvielle ,  Marina V. Plat ,  Khanh B. Nguyen

发明人： Regina T. Schmidt ,  Christopher A. Spence ,  Anna M. Minvielle ,  Marina V. Plat ,  Khanh B. Nguyen

IPC分类号： H01L2166

CPC分类号： H01L22/34

摘要： Prior to entering into manufacturing of a final production wafer, a series of test wafers are produced to analyze and test various structures. Each of the test wafers include a substrate, an insulating layer overlying the substrate, and a semi-conductive film layer formed over the insulating layer. The film layer is comprised of, for example, poly-silicon and has a predetermined thickness which substantially corresponds to the thickness of a film layer deposited on the final production wafer. The film layer is etched to form a desired pattern of structures and implanted with a dopant to diffuse dopant atoms thoughout. Thereafter, critical dimension measurements of the structures are taken preferably using electrical line width measurements techniques. Variations in critical dimension measurements taken from the test wafer as compared to desired predetermined line width measurements are compensated for prior to manufacturing the final production wafer so as to provide circuits with the desired electrical parameters.

摘要翻译： 在制造最终生产晶片之前，制造了一系列测试晶片来分析和测试各种结构。 每个测试晶片包括衬底，覆盖衬底的绝缘层和形成在绝缘层上的半导电膜层。 膜层由例如多晶硅构成，并且具有基本对应于沉积在最终生产晶片上的膜层的厚度的预定厚度。 蚀刻膜层以形成期望的结构图案，并注入掺杂剂以扩散掺杂剂原子。 此后，优选使用电线宽度测量技术来获得结构的临界尺寸测量。 在制造最终生产晶片之前补偿与期望的预定线宽测量值相比，从测试晶片获取的临界尺寸测量值的变化，以便为电路提供所需的电参数。

公开(公告)号：US06171739B2

公开(公告)日：2001-01-09

申请号：US09205792

申请日：1998-12-04

申请人： Christopher A. Spence ,  Regina T. Schmidt

发明人： Christopher A. Spence ,  Regina T. Schmidt

IPC分类号： G03F900

CPC分类号： G03F7/706

摘要： A method of determining at least one of focus and coma of a lens at a selected location in an imaging field, includes the step of forming a predetermined pattern on a mask for transference to a wafer through a lens. The pattern including a plurality of features such that a first of the plurality of features is situated adjacent a first side of a first phase shift region formed on the mask, and a second of the plurality of features is situated adjacent a second side of a second phase shift region formed on the mask, the second side being substantially opposite the first side. The method further includes the steps of transferring the pattern formed on the mask to the wafer, measuring a dimension of each of a first structure and a second structure formed on the wafer, the first structure being formed as a result of the first feature being transferred from the mask to the wafer and the second structure being formed as a result of the second feature being transferred from the mask to the wafer, and using the measured dimensions to determine the at least one of focus and coma of the lens at the selected location.

摘要翻译： 一种确定成像场中选定位置处的透镜的焦点和彗差中的至少一个的方法包括在掩模上形成预定图案以通过透镜转移到晶片的步骤。 所述图案包括多个特征，使得所述多个特征中的第一特征位于形成在所述掩模上的第一相移区域的第一侧附近，并且所述多个特征中的第二特征位于邻近所述掩模的第二侧面的第二侧 形成在掩模上的相移区域，第二侧基本上与第一侧相对。 该方法还包括以下步骤：将形成在掩模上的图案转印到晶片上，测量形成在晶片上的第一结构和第二结构中的每一个的尺寸，第一结构由于第一特征被转移而形成 从所述掩模到所述晶片，并且所述第二结构是由于所述第二特征从所述掩模转移到所述晶片而形成的，并且使用所测量的尺寸来确定所述位置处的所述透镜的焦点和彗差中的至少一个 。