公开(公告)号：US06741116B2

公开(公告)日：2004-05-25

申请号：US10272493

申请日：2002-10-15

申请人： Reinhard Herzer ,  Jurgen Masannek ,  Jan Lehmann

发明人： Reinhard Herzer ,  Jurgen Masannek ,  Jan Lehmann

IPC分类号： H03K17687

CPC分类号： H02M7/5387 ,  H02M7/538 ,  H03K17/0828 ,  H03K17/691

摘要： A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.

摘要翻译： 在控制器和功率逆变器的功率部件之间执行接口功能的半导体元件被设计用于控制半导体元件，特别是用于控制IGBT（绝缘栅双极晶体管）和MOSFET（金属氧化物半导体场效应晶体管） 电源开关采用不同的电路拓扑，用于中等和高功率容量。 该元件承载了执行信号处理（12），电平变换（13,14），栅极驱动器放大，工作电压的产生和监测，通过集电极 - 发射极电压检测的短路监测功能的单片集成电路，如 以及用于功率半导体开关的误差信号的处理，存储和传输。

公开(公告)号：US06851077B2

公开(公告)日：2005-02-01

申请号：US09815165

申请日：2001-03-22

申请人： Reinhard Herzer ,  Jan Lehmann ,  Jürgen Massanek ,  Sascha Pawel

发明人： Reinhard Herzer ,  Jan Lehmann ,  Jürgen Massanek ,  Sascha Pawel

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H02M1/08 ,  H03K17/082 ,  H03K17/16 ,  G11C29/00

CPC分类号： H03K17/567 ,  H03K17/0822 ,  H03K17/0828 ,  H03K17/168 ,  H03K17/18 ,  H03K17/691

摘要： A semiconductor component has interface functions between the controller and the power components of power converters, suitable for gating semiconductor switches. In particular, the semiconductor component serves to gate IGBT and MOSFET power switches in low and medium performance three-phase bridge circuits and integrates signal processing (12), level conversion (16) and amplification (gate driver) (17), error recognition, such as short-circuit monitoring by means of VCE detection (19) and operating voltage monitoring (21) as well as error processing (15) for several power semiconductor switches. The advantages of this gating IC in comparison with hybrid or discrete solutions consist of the high integration density of various digital, analogue and driver functions which result in a reduction in the number of discrete components, which means a lower failure rate of the system and lower costs. Another important consideration is the improvement of switching characteristics thanks to monolithic integration. The integrated circuit is less susceptible to interference voltage and has a lower temperature drift than discrete circuits.

摘要翻译： 半导体元件在控制器和功率转换器的功率部件之间具有接口功能，适用于选通半导体开关。 特别地，半导体元件用于在中低性能三相桥式电路中栅极IGBT和MOSFET功率开关，并集成信号处理（12），电平转换（16）和放大（栅极驱动器）（17），误差识别， 例如通过VCE检测的短路监测（19）和工作电压监测（21）以及多个功率半导体开关的误差处理（15）。 与混合或离散解决方案相比，该门控IC的优点在于各种数字，模拟和驱动器功能的高集成度密度，导致分立组件数量的减少，这意味着系统的故障率较低，系统更低 费用 另一个重要的考虑因素是通过单片集成来改善开关特性。 集成电路不易受到干扰电压的影响，并且具有比分立电路更低的温度漂移。