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公开(公告)号：US09754949B2
公开(公告)日：2017-09-05
申请号：US15242489
申请日：2016-08-20
发明人： Satoshi Kodama , Eiji Hasegawa
IPC分类号： H01L27/115 , H01L27/11521 , H01L29/423
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11524 , H01L29/42328
摘要： An insulating film made of the same material as that of a gate insulating film is formed so as to cover one sidewall of a control gate on a conducting film for floating gate. By selectively removing the conducting film for floating gate with the insulating film as a mask, a floating gate is formed from the conducting film for floating gate, and a portion of the gate insulating film is exposed at the floating gate. A nitrogen introduced portion is formed by introducing nitrogen into the exposed portion of the gate insulating film. Then, the insulating film is removed to expose an upper surface of a lateral protrusion of the floating gate. An erase gate is formed so as to face the upper surface and a side surface of the lateral protrusion.
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公开(公告)号：US09985039B2
公开(公告)日：2018-05-29
申请号：US15664474
申请日：2017-07-31
发明人： Satoshi Kodama , Eiji Hasegawa
IPC分类号： H01L27/115 , H01L27/11521 , H01L29/423
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11524 , H01L29/42328
摘要： An insulating film made of the same material as that of a gate insulating film is formed so as to cover one sidewall of a control gate on a conducting film for floating gate. By selectively removing the conducting film for floating gate with the insulating film as a mask, a floating gate is formed from the conducting film for floating gate, and a portion of the gate insulating film is exposed at the floating gate. A nitrogen introduced portion is formed by introducing nitrogen into the exposed portion of the gate insulating film. Then, the insulating film is removed to expose an upper surface of a lateral protrusion of the floating gate. An erase gate is formed so as to face the upper surface and a side surface of the lateral protrusion.
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