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公开(公告)号:US20190067472A1
公开(公告)日:2019-02-28
申请号:US16036434
申请日:2018-07-16
Applicant: Renesas Electronics Corporation
Inventor: Makoto KOSHIMIZU , Komaki INDUE , Hideki NIWAYAMA
IPC: H01L29/78 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/66 , H01L21/266 , H01L29/36 , H01L21/265 , H01L27/088 , H01L21/8234 , H01L27/02 , H01L29/06
Abstract: A semiconductor device with improved performance. A channel region and a well region having a lower impurity concentration than the channel region are formed in a semiconductor substrate on the source region side of an LDMOS. The channel region partially overlaps a gate electrode in plan view. In the gate length direction of the LDMOS, an end of the well region in the channel region is at a distance from the end of the gate electrode on the source region side of the LDMOS in a manner to be away from the gate electrode.