公开(公告)号：US20190067472A1

公开(公告)日：2019-02-28

申请号：US16036434

申请日：2018-07-16

Applicant: Renesas Electronics Corporation

Inventor： Makoto KOSHIMIZU ,  Komaki INDUE ,  Hideki NIWAYAMA

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/266 ,  H01L29/36 ,  H01L21/265 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/06

Abstract: A semiconductor device with improved performance. A channel region and a well region having a lower impurity concentration than the channel region are formed in a semiconductor substrate on the source region side of an LDMOS. The channel region partially overlaps a gate electrode in plan view. In the gate length direction of the LDMOS, an end of the well region in the channel region is at a distance from the end of the gate electrode on the source region side of the LDMOS in a manner to be away from the gate electrode.