公开(公告)号：US20170170183A1

公开(公告)日：2017-06-15

申请号：US15359729

申请日：2016-11-23

Applicant: Renesas Electronics Corporation

Inventor： Tohru KAWAI ,  Masahiro SHIMIZU

IPC: H01L27/092 ,  G11C11/419

CPC classification number: H01L27/0928 ,  G11C11/419 ,  H01L27/1104 ,  H01L28/00

Abstract: A semiconductor device aims to prevent a leak current from flowing between a well and a corner of an active region formed on an upper surface of another well in an SRAM. In a memory cell of the SRAM, a load MOSFET is formed. An end of an active region extending in y-direction is arranged to gradually go away from a p-well as it goes from a gate electrode G2 side to a gate electrode G4 side in such a manner that a distance in x-direction between the end of the active region and the p-well is larger than a shortest distance in the x-direction between the p-well and the active region.

公开(公告)号：US20170323890A1

公开(公告)日：2017-11-09

申请号：US15657690

申请日：2017-07-24

Applicant: Renesas Electronics Corporation

Inventor： Tohru KAWAI ,  Masahiro SHIMIZU

IPC: H01L27/092 ,  G11C11/419

CPC classification number: H01L27/0928 ,  G11C11/419 ,  H01L27/1104 ,  H01L28/00

Abstract: A semiconductor device aims to prevent a leak current from flowing between a well and a corner of an active region formed on an upper surface of another well in an SRAM. In a memory cell of the SRAM, a load MOSFET is formed. An end of an active region extending in y-direction is arranged to gradually go away from a p-well as it goes from a gate electrode G2 side to a gate electrode G4 side in such a manner that a distance in x-direction between the end of the active region and the p-well is larger than a shortest distance in the x-direction between the p-well and the active region.