公开(公告)号：US20160293473A1

公开(公告)日：2016-10-06

申请号：US15007275

申请日：2016-01-27

Applicant: Renesas Electronics Corporation

Inventor： Takamitsu YOSHIHARA ,  Takahiro KAINUMA ,  Hiroi OKA

IPC: H01L21/683 ,  H01L21/78 ,  H01L23/544 ,  H01L21/304

CPC classification number: H01L21/6836 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/78 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/34 ,  H01L24/37 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014

Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.

Abstract translation: 提供一种制造半导体器件的制造效率提高的半导体器件的方法。 制造半导体器件的方法包括以下步骤：（a）在具有与前表面相对的前表面和后表面的晶片（半导体晶片）的正面侧形成电路; （b）研磨具有中心部分（第一部分）的晶片的背面和围绕中心部分周围的周缘部分（第二部分），使得中心部分比周缘部分薄 ; （c）将保持带的上表面（接合面）附接到晶片的前表面; 以及（d）通过在由第一带保持晶片的同时用刀片（旋转刀片）切割中心部分的一部分来将中心部分与周边部分分离。

公开(公告)号：US20170287765A1

公开(公告)日：2017-10-05

申请号：US15628537

申请日：2017-06-20

Applicant: Renesas Electronics Corporation

Inventor： Takamitsu YOSHIHARA ,  Takahiro KAINUMA ,  Hiroi OKA

IPC: H01L21/683 ,  H01L23/00 ,  H01L23/495 ,  H01L21/304 ,  H01L21/78

CPC classification number: H01L21/6836 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/78 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/34 ,  H01L24/37 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014

Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.