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公开(公告)号:US20160293473A1
公开(公告)日:2016-10-06
申请号:US15007275
申请日:2016-01-27
Applicant: Renesas Electronics Corporation
Inventor: Takamitsu YOSHIHARA , Takahiro KAINUMA , Hiroi OKA
IPC: H01L21/683 , H01L21/78 , H01L23/544 , H01L21/304
CPC classification number: H01L21/6836 , H01L21/304 , H01L21/3043 , H01L21/78 , H01L23/49524 , H01L23/49562 , H01L23/49582 , H01L24/34 , H01L24/37 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , H01L2224/37147 , H01L2224/37599 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014
Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.
Abstract translation: 提供一种制造半导体器件的制造效率提高的半导体器件的方法。 制造半导体器件的方法包括以下步骤:(a)在具有与前表面相对的前表面和后表面的晶片(半导体晶片)的正面侧形成电路; (b)研磨具有中心部分(第一部分)的晶片的背面和围绕中心部分周围的周缘部分(第二部分),使得中心部分比周缘部分薄 ; (c)将保持带的上表面(接合面)附接到晶片的前表面; 以及(d)通过在由第一带保持晶片的同时用刀片(旋转刀片)切割中心部分的一部分来将中心部分与周边部分分离。
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公开(公告)号:US20170287765A1
公开(公告)日:2017-10-05
申请号:US15628537
申请日:2017-06-20
Applicant: Renesas Electronics Corporation
Inventor: Takamitsu YOSHIHARA , Takahiro KAINUMA , Hiroi OKA
IPC: H01L21/683 , H01L23/00 , H01L23/495 , H01L21/304 , H01L21/78
CPC classification number: H01L21/6836 , H01L21/304 , H01L21/3043 , H01L21/78 , H01L23/49524 , H01L23/49562 , H01L23/49582 , H01L24/34 , H01L24/37 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , H01L2224/37147 , H01L2224/37599 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014
Abstract: Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.
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