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公开(公告)号:US20150326209A1
公开(公告)日:2015-11-12
申请号:US14803065
申请日:2015-07-18
Applicant: Renesas Electronics Corporation
Inventor: Osamu Ozawa , Masashi Horiguchi , Takayasu Ito
IPC: H03K3/02
CPC classification number: H03B5/36 , H03B5/364 , H03B5/366 , H03B2200/0046 , H03B2200/005 , H03B2200/0082 , H03B2200/0088 , H03B2200/0094
Abstract: The present invention provides a semiconductor device including a first terminal and a second terminal respectively coupled to both ends of a crystal resonator, an inverter circuit having an input coupled to the first terminal and an output coupled to the second terminal, a feedback resistor which couples between the first terminal and the second terminal, a variable capacitor coupled to at least one of the first and second terminals, and a control circuit. The control circuit performs control to increase both of the drive capability of the inverter circuit and the capacitance value of the variable capacitor in a second mode rather than a first mode.
Abstract translation: 本发明提供了一种半导体器件,包括分别耦合到晶体谐振器的两端的第一端子和第二端子,具有耦合到第一端子的输入端和耦合到第二端子的输出端的反相器电路,耦合到 在第一端子和第二端子之间,耦合到第一和第二端子中的至少一个的可变电容器和控制电路。 控制电路执行控制以在第二模式而不是第一模式中增加逆变器电路的驱动能力和可变电容器的电容值。
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公开(公告)号:US20140035689A1
公开(公告)日:2014-02-06
申请号:US13952579
申请日:2013-07-26
Applicant: Renesas Electronics Corporation
Inventor: Osamu Ozawa , Masashi Horiguchi , Takayasu Ito
IPC: H03B28/00
CPC classification number: H03B5/36 , H03B5/364 , H03B5/366 , H03B2200/0046 , H03B2200/005 , H03B2200/0082 , H03B2200/0088 , H03B2200/0094
Abstract: The present invention provides a semiconductor device including a first terminal and a second terminal respectively coupled to both ends of a crystal resonator, an inverter circuit having an input coupled to the first terminal and an output coupled to the second terminal, a feedback resistor which couples between the first terminal and the second terminal, a variable capacitor coupled to at least one of the first and second terminals, and a control circuit. The control circuit performs control to increase both of the drive capability of the inverter circuit and the capacitance value of the variable capacitor in a second mode rather than a first mode.
Abstract translation: 本发明提供了一种半导体器件,包括分别耦合到晶体谐振器的两端的第一端子和第二端子,具有耦合到第一端子的输入端和耦合到第二端子的输出端的反相器电路,耦合到 在第一端子和第二端子之间,耦合到第一和第二端子中的至少一个的可变电容器和控制电路。 控制电路执行控制以在第二模式而不是第一模式中增加逆变器电路的驱动能力和可变电容器的电容值。
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公开(公告)号:US09093952B2
公开(公告)日:2015-07-28
申请号:US13952579
申请日:2013-07-26
Applicant: Renesas Electronics Corporation
Inventor: Osamu Ozawa , Masashi Horiguchi , Takayasu Ito
IPC: H03B5/36
CPC classification number: H03B5/36 , H03B5/364 , H03B5/366 , H03B2200/0046 , H03B2200/005 , H03B2200/0082 , H03B2200/0088 , H03B2200/0094
Abstract: The present invention provides a semiconductor device including a first terminal and a second terminal respectively coupled to both ends of a crystal resonator, an inverter circuit having an input coupled to the first terminal and an output coupled to the second terminal, a feedback resistor which couples between the first terminal and the second terminal, a variable capacitor coupled to at least one of the first and second terminals, and a control circuit. The control circuit performs control to increase both of the drive capability of the inverter circuit and the capacitance value of the variable capacitor in a second mode rather than a first mode.
Abstract translation: 本发明提供了一种半导体器件,包括分别耦合到晶体谐振器的两端的第一端子和第二端子,具有耦合到第一端子的输入端和耦合到第二端子的输出端的反相器电路,耦合到 在第一端子和第二端子之间,耦合到第一和第二端子中的至少一个的可变电容器和控制电路。 控制电路执行控制以在第二模式而不是第一模式中增加逆变器电路的驱动能力和可变电容器的电容值。
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