公开(公告)号：US20180138121A1

公开(公告)日：2018-05-17

申请号：US15869707

申请日：2018-01-12

申请人： Renesas Electronics Corporation

发明人： Takeshi IWAMOTO ,  Kazushi KONO ,  Masashi ARAKAWA ,  Toshiaki YONEZU ,  Shigeki OBAYASHI

IPC分类号： H01L23/525 ,  H01L23/532 ,  H01L23/528 ,  H01H85/041 ,  H01L23/522 ,  H01L23/62

摘要： A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.

公开(公告)号：US20170040261A1

公开(公告)日：2017-02-09

申请号：US15298484

申请日：2016-10-20

申请人： Renesas Electronics Corporation

发明人： Takeshi IWAMOTO ,  Kazushi KONO ,  Masashi ARAKAWA ,  Toshiaki YONEZU ,  Shigeki OBAYASHI

IPC分类号： H01L23/525 ,  H01L23/528 ,  H01L23/532 ,  H01H85/041

CPC分类号： H01L23/5256 ,  H01H85/041 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

摘要翻译： 一种具有电熔丝结构的半导体器件，其接收电流以允许电熔丝被切割而不损坏保险丝周围的部分。 电熔丝可以电连接在电子电路和冗余电路之间作为电子电路的备用电路。 在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。 电熔丝形成为细层，由主配线和阻挡膜构成。 主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。 主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。

公开(公告)号：US20140021559A1

公开(公告)日：2014-01-23

申请号：US14033036

申请日：2013-09-20

申请人： Renesas Electronics Corporation

发明人： Takeshi IWAMOTO ,  Kazushi Kono ,  Masashi Arakawa ,  Toshiaki Yonezu ,  Shigeki Obayashi

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01H85/041 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

摘要翻译： 提供一种具有电熔丝结构的半导体器件，其接收要被允许切割的电流的供应，而不损坏保险丝周围的部分。 电子熔断器电连接在电子电路和冗余电路之间，作为电子电路的备用电路。 在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。 电熔丝形成为细层，由主配线和阻挡膜构成。 主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。 主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。

公开(公告)号：US20150303144A1

公开(公告)日：2015-10-22

申请号：US14590294

申请日：2015-01-06

申请人： Renesas Electronics Corporation

发明人： Takeshi IWAMOTO ,  Kazushi KONO ,  Masashi ARAKAWA ,  Toshiaki YONEZU ,  Shigeki OBAYASHI

IPC分类号： H01L23/525 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/5256 ,  H01H85/041 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

摘要翻译： 一种具有电熔丝结构的半导体器件，其接收电流以允许电熔丝被切割而不损坏保险丝周围的部分。 电熔丝可以电连接在电子电路和冗余电路之间作为电子电路的备用电路。 在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。 电熔丝形成为细层，由主配线和阻挡膜构成。 主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。 主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。