公开(公告)号：US20150243735A1

公开(公告)日：2015-08-27

申请号：US14711771

申请日：2015-05-14

Applicant: Renesas Electronics Corporation

Inventor： Kazuo TOMITA ,  Toshiyuki OASHI ,  Hidenori SATO

IPC: H01L29/06 ,  H01L29/45 ,  H01L23/528 ,  H01L27/092 ,  H01L29/10

CPC classification number: H01L29/0696 ,  H01L21/823871 ,  H01L23/52 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/1095 ,  H01L29/45 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A gate interconnection portion (GHB) includes a first gate interconnection portion (GHB1), a second gate interconnection portion (GHB2), and a third gate interconnection portion (GHB3). The first gate interconnection portion (GHB1) is formed in parallel to a Y axis direction toward a power supply interconnection and extends to a prescribed position within an element formation region (PER). The second gate interconnection portion (GHB2) is formed in parallel to a direction obliquely bent with respect to the Y-axis direction from the first gate interconnection portion (GHB1) toward the power supply interconnection, and extends across a boundary between the element formation region (PER) and an element isolation insulating film (EB), which is in parallel to an X axis direction. The third gate interconnection portion (GHB3) further extends in parallel to the Y-axis direction from the second gate interconnection portion (GHB2) toward the power supply interconnection.

Abstract translation: 门互连部分（GHB）包括第一栅极互连部分（GHB1），第二栅极互连部分（GHB2）和第三栅极互连部分（GHB3）。 第一栅极互连部分（GHB1）平行于Y轴方向朝向电源互连形成，并延伸到元件形成区域（PER）内的规定位置。 第二栅极互连部（GHB2）与从第一栅极互连部（GHB1）朝向电源互连方向相对于Y轴方向倾斜地弯曲的方向平行地形成，并且跨越元件形成区域 （PER）和与X轴方向平行的元件隔离绝缘膜（EB）。 第三栅极互连部分（GHB3）还从第二栅极互连部分（GHB2）朝着电源互连方向平行于Y轴方向延伸。