公开(公告)号：US20240305260A1

公开(公告)日：2024-09-12

申请号：US18506152

申请日：2023-11-10

Applicant: RichWave Technology Corp

Inventor： Hao-Min Huang

IPC: H03H3/08 ,  H03H9/25

CPC classification number: H03H3/08 ,  H03H9/25

Abstract: A manufacturing method of an acoustic wave device and an acoustic wave device are provided. The manufacturing method includes providing a piezoelectric substrate. A transducer and a solder layer are provided on the piezoelectric substrate, and the transducer is covered with a passivation layer. The method further includes forming a first photoresist layer on the piezoelectric substrate, and patterning the first photoresist layer to form a first patterned photoresist layer. The first patterned photoresist layer covers an upper surface of the passivation layer and exposes an upper surface of the solder layer. The method further includes forming a metal layer on the upper surface of the solder layer and the first patterned photoresist layer, and stripping the first patterned photoresist layer.