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公开(公告)号：US20240349431A1
公开(公告)日：2024-10-17
申请号：US18584089
申请日：2024-02-22
发明人： David Gomez , Christopher Andrew Bower , Raja Fazan Gul , António José Marques Trindade , Ronald S. Cok
IPC分类号： H05K3/30 , B41F16/00 , B65G47/90 , H01L21/67 , H03H3/02 , H03H3/08 , H05K3/40 , H10N30/06 , H10N30/073
CPC分类号： H05K3/305 , B41F16/006 , B65G47/90 , H03H3/02 , H03H3/08 , H05K3/30 , H05K3/301 , H05K3/303 , H05K3/40 , H05K3/4007 , H05K3/4092 , H10N30/06 , H01L21/67144 , H01L2933/0066 , H10N30/073
摘要： A method of printing comprises providing a component source wafer comprising components, a transfer device, and a patterned substrate. The patterned substrate comprises substrate posts that extend from a surface of the patterned substrate. Components are picked up from the component source wafer by adhering the components to the transfer device. One or more of the picked-up components are printed to the patterned substrate by disposing each of the one or more picked-up components onto one of the substrate posts, thereby providing one or more printed components in a printed structure.
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公开(公告)号：US20240305260A1
公开(公告)日：2024-09-12
申请号：US18506152
申请日：2023-11-10
发明人： Hao-Min Huang
摘要： A manufacturing method of an acoustic wave device and an acoustic wave device are provided. The manufacturing method includes providing a piezoelectric substrate. A transducer and a solder layer are provided on the piezoelectric substrate, and the transducer is covered with a passivation layer. The method further includes forming a first photoresist layer on the piezoelectric substrate, and patterning the first photoresist layer to form a first patterned photoresist layer. The first patterned photoresist layer covers an upper surface of the passivation layer and exposes an upper surface of the solder layer. The method further includes forming a metal layer on the upper surface of the solder layer and the first patterned photoresist layer, and stripping the first patterned photoresist layer.
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公开(公告)号：US12074586B2
公开(公告)日：2024-08-27
申请号：US17933070
申请日：2022-09-16
发明人： Guojun Weng , Gongbin Tang
CPC分类号： H03H9/6423 , H03H3/08 , H03H9/02897 , H03H9/059 , H03H9/1092
摘要： A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.
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公开(公告)号：US20240258983A1
公开(公告)日：2024-08-01
申请号：US18424288
申请日：2024-01-26
发明人： SUBEI SHUN , Shinichi Shioi
CPC分类号： H03H3/08 , H03H9/02543 , H03H9/02834 , H03H9/6483
摘要： An acoustic wave device includes a high acoustic velocity substrate, a medium acoustic velocity layer formed on the main surface of the high acoustic velocity substrate, and a piezoelectric substrate formed directly or via another layer on the main surface of the medium acoustic velocity layer, wherein an acoustic velocity is slowed down gradually from the main surface of the high acoustic velocity substrate toward the main surface of the medium acoustic velocity layer between the high acoustic velocity substrate and the medium acoustic velocity layer; and a method for producing the same.
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公开(公告)号：US20240223155A1
公开(公告)日：2024-07-04
申请号：US18394448
申请日：2023-12-22
发明人： John KOULAKIS , Drew Morosin
CPC分类号： H03H9/145 , H03H3/08 , H03H9/02543 , H03H9/25
摘要： An acoustic resonator is provided that includes a substrate; a piezoelectric layer having first and second surfaces that oppose each other with the second surface coupled to the substrate either directly or via one or more intermediate layers. The piezoelectric layer includes a diaphragm over a cavity extending in at least one of the substrate and the one or more intermediate layers. An interdigital transducer (IDT) is disposed at the piezoelectric layer and has interleaved fingers on the diaphragm. Moreover, first and second dielectric layers are disposed on opposing surfaces of the diaphragm, where the first and second dielectric layers have a first thickness and the piezoelectric layer has a second thickness greater than the first thickness. The first and second dielectric layers each comprise one of ZnS, HfN, HfO2, ZnO and Ta2O5, to improve an electrotechnical coupling of the acoustic resonator.
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公开(公告)号：US20240195378A1
公开(公告)日：2024-06-13
申请号：US18585248
申请日：2024-02-23
发明人： Jian WANG
CPC分类号： H03H3/08 , H03H9/02661 , H03H9/02834 , H03H9/059 , H03H9/14538
摘要： A surface acoustic wave (SAW) device includes a substrate; an interdigital transducer (IDT) having lead-out portions and arrays of interdigital electrodes formed on the substrate, wherein the interdigital electrodes includes central portions, end portions, and intermediate portions between the end portions and the lead-out portions, and a thickness of the interdigital electrodes at the end portions is greater than a thickness of the interdigital electrodes at the central portions and the intermediate portions, thereby forming protruding structures at the end portions of the interdigital electrodes; a protective layer formed on the protruding structures at the end portions of the interdigital electrodes; a first temperature compensation layer formed on the protective layer; a second temperature compensation layer formed on the first temperature compensation layer and on the central portions and the intermediate portions of the interdigital electrodes; and a passivation layer formed on the second temperature compensation layer.
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7.发明公开公开(公告)号：US20240186981A1
公开(公告)日：2024-06-06
申请号：US18218797
申请日：2023-07-06
发明人： Cristian CASSELLA , Xuanyi ZHAO , Onurcan KAYA
CPC分类号： H03H9/145 , H03H3/08 , H03H9/02543 , H03H9/25
摘要： Provided herein are acoustic material (AM) CMRs having an active region including a conductive plate suspended over a cavity in a substrate and anchored to the substrate by two y-anchors, a piezoelectric layer disposed on the conductive plate, and an interdigitated metal structure (IDT) to cause transduction for excitement of a longitudinal mode of vibration of the AM CMR; and a pair of AM reflectors (AMRs) forming lateral anchors anchored to the substrate and attached to opposite sides of the conductive plate along the direction of vibration of the AM CMR, the AMRs each including a conductive anchor plate suspended over the cavity in the substrate, and a piezoelectric layer disposed on the conductive plate, and a parallel array of rods disposed on the piezoelectric layer, wherein the AMRs are configured to generate an acoustic stopband for inhibiting lateral leakage of the excited longitudinal mode of vibration.
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公开(公告)号：US20240186977A1
公开(公告)日：2024-06-06
申请号：US18397663
申请日：2023-12-27
发明人： Chencheng ZHOU , Jie ZOU , Gongbin TANG
CPC分类号： H03H9/02818 , H03H3/08 , H03H9/02834 , H03H9/145 , H03H9/25
摘要： A surface acoustic wave resonator device and method for manufacturing the same, and filter, the surface acoustic wave resonator device includes an interdigital electrode body region, and including: a piezoelectric substrate; a first interdigital electrode, a first interdigital electrode connection part and a first interdigital electrode lead-out part electrically connected to each other; a second interdigital electrode, a second interdigital electrode connection part and a second interdigital electrode lead-out part electrically connected to each other; and a spanning structure; wherein the first and second interdigital electrode connection parts are respectively located on opposite sides of the interdigital electrode body region; the first interdigital electrode connection part contacts the first interdigital electrode and is electrically isolated from the second interdigital electrode through the spanning structure; the second interdigital electrode connection part contacts the second interdigital electrode and is electrically isolated from the first interdigital electrode through the spanning structure.
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公开(公告)号：US11990891B2
公开(公告)日：2024-05-21
申请号：US18130504
申请日：2023-04-04
发明人： Guojun Weng , Gongbin Tang , Jingyong Liu
CPC分类号： H03H9/25 , H03H3/08 , H03H9/02834 , H03H9/64
摘要： A surface acoustic wave resonator structure and a method of forming the resonator structure and a filter are provided. The resonator structure includes: a piezoelectric substrate; an interdigital transducer including a first interdigital electrode structure and a second interdigital electrode structure, wherein the first interdigital electrode structure comprises first interdigital electrodes and a first interdigital electrode lead-out part connected to each other, the second interdigital electrode structure comprises second interdigital electrodes and a second interdigital electrode lead-out part connected to each other, the first interdigital electrodes and the second interdigital electrodes extend along a first direction and are alternately arranged in a second direction; a temperature compensation layer, disposed on a side of the interdigital transducer away from the piezoelectric substrate; and a first protection layer disposed between the interdigital transducer and the temperature compensation layer and configured to protect the interdigital transducer from being oxidized.
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公开(公告)号：US11984871B2
公开(公告)日：2024-05-14
申请号：US17093987
申请日：2020-11-10
CPC分类号： H03H9/0514 , H03H3/02 , H03H3/08 , H03H9/059 , H03H9/1042 , H03H9/1085 , H03H9/706 , H03H9/725
摘要： A package that includes a first filter device and a second filter device coupled to the first filter device. The first filter device includes a first substrate comprising a first piezoelectric material, and a first metal layer coupled to a first surface of the first substrate. The second filter device includes a second substrate comprising a second piezoelectric material, and a second metal layer coupled to a first surface of the first substrate. The package includes a first pillar interconnect configured to be electrically coupled to the first metal layer of the first filter device, where the first pillar interconnect extends through the second filter device. The package further includes a second pillar interconnect configured to be electrically coupled to the second metal layer of the second filter device.
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