Polythiophenes, block copolymers made therefrom, and methods of forming the same
    2.
    发明授权
    Polythiophenes, block copolymers made therefrom, and methods of forming the same 有权
    聚噻吩,由其制得的嵌段共聚物及其形成方法

    公开(公告)号:US07098294B2

    公开(公告)日:2006-08-29

    申请号:US10417244

    申请日:2003-04-16

    IPC分类号: C08G18/64 C08G75/00

    摘要: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10−8 S/cm for certain applications to as high as several hundred S/cm or more.

    摘要翻译: 本发明涉及聚噻吩,特别是区域性头对头聚(3-烷基噻吩)(HT-PAT),由其制备的嵌段共聚物及其形成方法。 本发明提供具有明确定义的特异性端基的HT-PAT,定义的HT-PAT的功能化,以及端基官能化的HT-PAT与嵌段共聚物与结构聚合物的结合。 由HT-PAT形成的本征导电的二嵌段和三嵌段共聚物具有优异的导电性和低多分散性,这在许多应用中是有用的。 已经发现本发明的嵌段共聚物的某些应用的电导率范围为10 -8 S / cm以下,高达几百S / cm以上。

    Polythiophenes, block copolymers made therefrom, and methods of forming the same
    3.
    再颁专利
    Polythiophenes, block copolymers made therefrom, and methods of forming the same 有权
    聚噻吩,由其制得的嵌段共聚物及其形成方法

    公开(公告)号:USRE41587E1

    公开(公告)日:2010-08-24

    申请号:US11799760

    申请日:2007-05-02

    摘要: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10−8 S/cm for certain applications to as high as several hundred S/cm or more.

    摘要翻译: 本发明涉及聚噻吩,特别是区域性头对头聚(3-烷基噻吩)(HT-PAT),由其制备的嵌段共聚物及其形成方法。 本发明提供具有明确定义的特异性端基的HT-PAT,定义的HT-PAT的功能化,以及端基官能化的HT-PAT与嵌段共聚物与结构聚合物的结合。 由HT-PAT形成的本征导电的二嵌段和三嵌段共聚物具有优异的导电性和低多分散性,这在许多应用中是有用的。 已经发现本发明的嵌段共聚物的电导率范围从某些应用的10-8S / cm的低至高达几百S / cm或更高。

    Polythiophenes, block copolymers made therefrom, and methods of forming the same
    4.
    再颁专利
    Polythiophenes, block copolymers made therefrom, and methods of forming the same 有权
    聚噻吩,由其制得的嵌段共聚物及其形成方法

    公开(公告)号:USRE40813E1

    公开(公告)日:2009-06-30

    申请号:US11197727

    申请日:2005-08-04

    IPC分类号: C08G18/64

    摘要: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10−8 S/cm for certain applications to as high as several hundred S/cm or more.

    摘要翻译: 本发明涉及聚噻吩,特别是区域性头对头聚(3-烷基噻吩)(HT-PAT),由其制备的嵌段共聚物及其形成方法。 本发明提供具有明确定义的特异性端基的HT-PAT,定义的HT-PAT的功能化,以及端基官能化的HT-PAT与嵌段共聚物与结构聚合物的结合。 由HT-PAT形成的本征导电的二嵌段和三嵌段共聚物具有优异的导电性和低多分散性,这在许多应用中是有用的。 已经发现本发明的嵌段共聚物的电导率范围从某些应用的10-8S / cm的低至高达几百S / cm或更高。

    Polythiophenes, block copolymers made therefrom, and methods of forming the same
    5.
    发明授权
    Polythiophenes, block copolymers made therefrom, and methods of forming the same 有权
    聚噻吩,由其制得的嵌段共聚物及其形成方法

    公开(公告)号:US08227566B2

    公开(公告)日:2012-07-24

    申请号:US11088341

    申请日:2005-03-23

    摘要: The present invention relates to polythiophenes, particularly regioregular head-to-tail poly(3-alkylthiophenes) (HT-PATs), block copolymers made therefrom, and their methods of formation. The present invention provides HT-PATs with well-defined, specific end-groups, functionalization of the defined HT-PATs, and incorporation of end group functionalized HT-PATs into block copolymers with structural polymers. The intrinsically conductive diblock and triblock copolymers, formed from the HT-PATs, have excellent conductivity and low polydispersities that are useful in a number of applications. The block copolymers of the present invention have been found to exhibit conductivities that range from a low of 10−8 S/cm for certain applications to as high as several hundred S/cm or more.

    摘要翻译: 本发明涉及聚噻吩,特别是区域性头对头聚(3-烷基噻吩)(HT-PAT),由其制备的嵌段共聚物及其形成方法。 本发明提供具有明确定义的特异性端基的HT-PAT,定义的HT-PAT的功能化,以及端基官能化的HT-PAT与嵌段共聚物与结构聚合物的结合。 由HT-PAT形成的本征导电的二嵌段和三嵌段共聚物具有优异的导电性和低多分散性,这在许多应用中是有用的。 已经发现本发明的嵌段共聚物的电导率范围从某些应用的10-8S / cm的低至高达几百S / cm或更高。