公开(公告)号：US20230420498A1

公开(公告)日：2023-12-28

申请号：US18164571

申请日：2023-02-04

Applicant: Richtek Technology Corporation

Inventor： Han-Chung Tai

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/0642 ,  H01L29/7786 ,  H01L29/7783 ,  H01L29/402 ,  H01L29/0649 ,  H01L29/66462 ,  H01L29/2003

Abstract: A high electron mobility transistor includes: a substrate; a first gallium nitride (GaN) layer, which is formed on the substrate; a first aluminum gallium nitride (AlGaN) layer, which is formed on and in contact with the first GaN layer, wherein the first AlGaN layer has a trench; two insulation sidewalls, which are in contact with and completely overlay two inner sidewalls of the trench, respectively; a P-type GaN layer, which is formed on and in contact with the first AlGaN layer, wherein a part of the P-type GaN layer fills into the trench; a gate, which is formed on and in contact with the P-type GaN layer, and is configured to receive a gate voltage, for turning ON or OFF the enhancement HEMT; and a source and a drain, which are located outside two sides of the gate, respectively.

公开(公告)号：US20240030297A1

公开(公告)日：2024-01-25

申请号：US18314684

申请日：2023-05-09

Applicant: Richtek Technology Corporation

Inventor： Chin-Chin Tsai ,  Han-Chung Tai ,  Yong-Zhong Hu

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/40

CPC classification number: H01L29/41725 ,  H01L29/42376 ,  H01L29/401

Abstract: An integrated structure of semiconductor devices having a shared contact plug includes: a first device, a second device and a shared contact plug. The first device includes a first gate having a conduction region, two spacer regions and a protection region. The two spacer regions overlay and are connected with two ends of the conductive region, respectively. The protection region overlays and is connected with the spacer region located outside a shared side of the conductive region. The second device includes a shared region, wherein the shared region is located in a semiconductor layer which is located below and outside the protection region. The shared contact plug is formed on and in contact with the conductive region and the shared region. The first gate is electrically connected with the shared region through the shared contact plug, wherein the shared contact plug overlays and is connected with the protection region.