INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING THE SAME
    1.
    发明申请
    INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING THE SAME 有权
    信息记录介质及其制造方法

    公开(公告)号:US20090250339A1

    公开(公告)日:2009-10-08

    申请号:US12486498

    申请日:2009-06-17

    IPC分类号: C23C14/34

    摘要: The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Ht), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.

    摘要翻译: 本发明的信息记录介质包括以下氧化物基材料层中的至少一种:(I)含有Zr的氧化物基材料层,选自由La,Ga和In组成的组GL1中的至少一种元素, 和氧(O); (II)包含M1(其中M1是Zr和Hf的混合物或Ht)的氧化物基材料层,选自由La,Ce,Al,Ga,In,Mg和Y组成的组GL2中的至少一种元素 ,和O; (III)含有选自由Zr和Hf组成的组GM2中的至少一种元素的氧化物基材料层,选自GL2,Si和O的至少一种元素; 和(IV)含有选自组GM2,选自组GL2,Cr和O中的至少一种元素中的至少一种元素的氧化物基材料层。该氧化物基材料层可以用于例如 电介质层。