Stress measurement method using X-ray diffraction
    1.
    发明申请
    Stress measurement method using X-ray diffraction 失效
    应力测量方法采用X射线衍射

    公开(公告)号:US20040177700A1

    公开(公告)日:2004-09-16

    申请号:US10650059

    申请日:2003-08-27

    IPC分类号: G01L001/24

    CPC分类号: G01N23/207 H01L21/31691

    摘要: A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of nullnull0null, 45null or 90null. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of null) with the Miller indices (hkl) is detected. A diffraction angle null in a strain state is measured in the vicinity of a Bragg's angle null0 in a non-strain state. Strains null with respect to a plurality of null are calculated from the difference between the measurement values null and the Bragg's angle null0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.

    摘要翻译: 在假设平面应力状态下,使用X射线衍射测量四方晶体的c轴取向试样的应力。 X射线光学系统设置在phi = 0°,45°或90°的位置。 检测在米勒指数(hk1)处在晶面(法线方向为角度方向)的X射线衍射的X射线。 在非应变状态下在布拉格角θ0附近测量应变状态下的衍射角θ。 从测量值θ和布拉格角θ0之间的差计算相对于多个psi的菌株ε。 相对于具有Laue对称性4 / mmm的四方晶系确定比应力计算公式。 应力由绘制的测量结果的线性线的斜率计算。