公开(公告)号：US20210372714A1

公开(公告)日：2021-12-02

申请号：US17290830

申请日：2019-10-14

申请人： Robert Bosch GmbH

发明人： Christine Arenz ,  Giuseppe Buttice ,  Reiner Ramsayer ,  Ulrike Groeger

IPC分类号： F28F21/02 ,  D03D25/00 ,  D03D15/50 ,  D03D15/275

摘要： The invention relates to a heat sink (1) having a main body (2) and a plurality of carbon-nanostructure-based fibres (CNB, 3), more particularly carbon nano tubes (CNT, 4) or graphene fibres, of which at least some are attached to the main body (2). According to the invention, the fibres (3, 4), by adhering to or supporting one another, form a volume structure (12), more particularly in the manner of cotton wool, felt or a spun yarn, or the fibres (3, 4) form loops (6) or a three-dimensional woven fabric.

公开(公告)号：US11906254B2

公开(公告)日：2024-02-20

申请号：US17290830

申请日：2019-10-14

申请人： Robert Bosch GmbH

发明人： Christine Arenz ,  Giuseppe Buttice ,  Reiner Ramsayer ,  Ulrike Groeger

IPC分类号： F28F21/02 ,  D03D15/275 ,  D03D15/50 ,  D03D25/00 ,  D03D15/37 ,  H01L23/373 ,  H01L23/473

CPC分类号： F28F21/02 ,  D03D15/275 ,  D03D15/37 ,  D03D15/50 ,  D03D25/005 ,  D10B2101/122 ,  H01L23/3733 ,  H01L23/473

摘要： The invention relates to a heat sink (1) having a main body (2) and a plurality of carbon-nanostructure-based fibres (CNB, 3), more particularly carbon nano tubes (CNT, 4) or graphene fibres, of which at least some are attached to the main body (2). According to the invention, the fibres (3, 4), by adhering to or supporting one another, form a volume structure (12), more particularly in the manner of cotton wool, felt or a spun yarn, or the fibres (3, 4) form loops (6) or a three-dimensional woven fabric.

公开(公告)号：US20220068777A1

公开(公告)日：2022-03-03

申请号：US17415032

申请日：2019-11-25

申请人： Robert Bosch GmbH

发明人： Christine Arenz ,  Gunter Flamm ,  Michael Maercker ,  Reiner Schuetz

IPC分类号： H01L23/498 ,  H01G4/228 ,  H05K1/02 ,  H01L23/64 ,  H02M7/00

摘要： Low-inductance connecting device (10) for connecting a semiconductor module (20) to an intermediate circuit capacitor (30), comprising at least one first contact region (11a) and one second contact region (12) which has opposite polarity to the first contact region (11a), which first and second contact region are designed to make contact with the semiconductor module (20), at least one third contact region (13a) which has the same polarity as the first contact region (11a) and one fourth contact region (14) which has opposite polarity to the third contact region (13a), which third and fourth contact regions are designed to make contact with the intermediate circuit capacitor (30), at least one first connecting region (15a) which is designed to connect the first contact region (11a) and the third contact region (13a) to one another, and at least one second connecting region (16a) which is designed to connect the second contact region (12) and the fourth contact region (14) to one another, wherein the first connecting region (15a) and the second connecting region (16a) are each designed as planar busbars which are separate from one another.