公开(公告)号：US20240165668A1

公开(公告)日：2024-05-23

申请号：US18502558

申请日：2023-11-06

Applicant: Robert Bosch GmbH

Inventor： Timo Schary ,  Jan David Brehm ,  Johannes Baader

IPC: B06B1/06

CPC classification number: B06B1/0666

Abstract: A method for producing a micro-electromechanical vibration system. A carrier substrate is provided. A peripheral first channel extending from a first surface of the carrier substrate at least partially through the carrier substrate, is produced. A passivation layer is applied to the first surface, and the peripheral first channel is at least partially filled with the passivation layer. A first polysilicon layer grows on the passivation layer and/or the first surface of the carrier substrate. A transducer element of the micro-electromechanical vibration system is arranged on a second surface of the first polysilicon layer. A second channel is produced completely through the carrier substrate in the direction of the transducer element. The second channel extends as far as the passivation layer, so that the vibratable transducer plate of the micro-electromechanical vibration system is produced adjacently to the second channel using the first polysilicon layer.

公开(公告)号：US20240147862A1

公开(公告)日：2024-05-02

申请号：US18547915

申请日：2022-04-25

Applicant: Robert Bosch GmbH

Inventor： Isabelle Raible ,  Jan David Brehm ,  Johannes Baader ,  Reinhold Roedel ,  Timo Schary

IPC: H10N30/03 ,  B06B1/06

CPC classification number: H10N30/03 ,  B06B1/0644

Abstract: A method for producing a microelectromechanical oscillation system. A carrier substrate having a first surface is provided. A circumferential first trench is produced, which extends from the first surface at least partially through the carrier substrate. A passivation layer is applied to the first surface of the first carrier substrate and the first circumferential trench is at least partially filled with the passivation layer. A first polysilicon layer is grown on the passivation layer and/or the first surface of the carrier substrate. A transducer element of the microelectromechanical oscillation system is arranged on a second surface of the first polysilicon layer. A second trench is produced through the carrier substrate in the direction of the transducer element, which extends up to the passivation layer so that the oscillatable transducer plate of the microelectromechanical oscillation system is produced adjacent to the second trench using the first polysilicon layer.