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公开(公告)号：US08236611B1
公开(公告)日：2012-08-07
申请号：US12758833
申请日：2010-04-13
IPC分类号： H01L21/00
CPC分类号： H01L21/78
摘要： A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.
摘要翻译： 公开了一种用于从具有牺牲层和一个或多个器件层的衬底分离裸片的方法，其中保持器形成在器件层中并固定到衬底。 深层反应离子蚀刻（DRIE）从底侧蚀刻通过衬底的沟槽限定了每个管芯的形状。 然后将手柄晶片附接到基板的底侧，并且牺牲层被蚀刻以对模具进行分割并从保持器和基板形成框架。 将单个模具保持在适当位置的框架和处理晶片可以用夹子或夹子附接在一起并形成用于单个模具的封装。 可以从设备层形成一个或多个止挡件，以限制单模模具的滑动运动。
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公开(公告)号：US07034271B1
公开(公告)日：2006-04-25
申请号：US10857115
申请日：2004-05-27
CPC分类号： G02B21/0016 , G02B21/18
摘要： A full-field imaging, long working distance, incoherent interference microscope suitable for three-dimensional imaging and metrology of MEMS devices and test structures on a standard microelectronics probe station. A long working distance greater than 10 mm allows standard probes or probe cards to be used. This enables nanometer-scale 3-dimensional height profiles of MEMS test structures to be acquired across an entire wafer while being actively probed, and, optionally, through a transparent window. An optically identical pair of sample and reference arm objectives is not required, which reduces the overall system cost, and also the cost and time required to change sample magnifications. Using a LED source, high magnification (e.g., 50×) can be obtained having excellent image quality, straight fringes, and high fringe contrast.
摘要翻译： 全场成像，长工作距离，非相干干涉显微镜适用于标准微电子探针台上的MEMS器件和测试结构的三维成像和计量。 长度大于10 mm的工作距离允许使用标准探头或探针卡。 这使得能够在被积极探测的情况下以及可选地通过透明窗口的整个晶片上获取MEMS测试结构的纳米尺度的三维高度分布。 不需要光学上相同的一对样品和参考臂物镜，这降低了整体系统成本，以及改变样品放大率所需的成本和时间。 使用LED源，可以获得具有优异的图像质量，直条纹和高边缘对比度的高放大率（例如，50倍）。
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