公开(公告)号：US06566030B2

公开(公告)日：2003-05-20

申请号：US10001467

申请日：2001-10-31

申请人： Robert David Grober ,  Scott Josef Bukofsky ,  Paul Michael Dentinger ,  James Welch Taylor

发明人： Robert David Grober ,  Scott Josef Bukofsky ,  Paul Michael Dentinger ,  James Welch Taylor

IPC分类号： G03C173

CPC分类号： G03F7/0045 ,  G03F7/105

摘要： A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.

公开(公告)号：US06376149B2

公开(公告)日：2002-04-23

申请号：US09320101

申请日：1999-05-26

申请人： Robert David Grober ,  Scott Josef Bukofsky ,  Paul Michael Dentinger ,  James Welch Taylor

发明人： Robert David Grober ,  Scott Josef Bukofsky ,  Paul Michael Dentinger ,  James Welch Taylor

IPC分类号： G03C516

CPC分类号： G03F7/0045 ,  G03F7/105

摘要： A method of imaging acids in chemically amplified photoresists involves exposing to radiation a chemically amplified photoresist comprising a pH-dependent fluorophore. Upon exposure to radiation, such as deep-UV radiation, the chemically amplified photoresist produces an acid, which is then visualized by the fluorescence of the pH-dependent fluorophore. An image is generated from the fluorescence of the pH-dependent fluorophore, thus providing a map of the location of the acid in the photoresist. The images are able to be visualized prior to a post-exposure bake of the resist composition. Chemically amplified photoresists comprising pH-dependent fluorophores are useful in the practice of the present invention. The method finds particular use in examining the efficiency of photoacid generators in chemically amplified photoresists, in that it allows the practitioner the ability to directly determine the amount of acid generated within the photoresist.

摘要翻译： 在化学放大的光致抗蚀剂中成像酸的方法包括将包含pH依赖荧光团的化学放大的光致抗蚀剂暴露于辐射。 在暴露于诸如深紫外辐射的辐射之后，化学放大的光致抗蚀剂产生酸，然后通过pH依赖性荧光团的荧光显现出酸。 从pH依赖性荧光团的荧光产生图像，从而提供光致抗蚀剂中酸的位置的图。 在抗蚀剂组合物的曝光后烘烤之前，图像能够被可视化。 包含pH依赖性荧光团的化学放大光致抗蚀剂在本发明的实践中是有用的。 该方法特别用于检查化学放大光致抗蚀剂中光酸产生剂的效率，因为其允许从业者直接测定光致抗蚀剂内产生的酸的量的能力。

公开(公告)号：US6162592A

公开(公告)日：2000-12-19

申请号：US167111

申请日：1998-10-06

申请人： James Welch Taylor ,  Geoffrey William Reynolds

发明人： James Welch Taylor ,  Geoffrey William Reynolds

IPC分类号： G03F7/32

CPC分类号： G03F7/322

摘要： Methods of fabricating microelectronic devices comprise applying compositions comprising salt additives and basic components to resists to decrease the surface roughness of the resists and form the microelectronic devices having the resists present therein.

摘要翻译： 制造微电子器件的方法包括施加包含盐添加剂和碱性组分的组合物以抵抗抗蚀剂的表面粗糙度并形成其中存在抗蚀剂的微电子器件。