-
1.发明授权Method of and platen for controlling removal rate characteristics in chemical mechanical planarization 失效用于控制化学机械平面化中去除率特性的方法和压板公开(公告)号：US06955588B1
公开(公告)日：2005-10-18
申请号：US10816431
申请日：2004-03-31
CPC分类号： B24B37/12
摘要： Methods and a platen control parameters of a removal rate characteristic in chemical mechanical planarization, while allowing a low-cost polishing pad to be used especially in fast edge operations, and while reducing the amount of fluid used to support the polishing pad. Platen configuration provides fluid pressure control to reduce leakage of fluid from beneath the polishing pad, and contributes to control of a location of an inflection point of the removal rate characteristic. Another configuration controls a shape of a section of the removal rate characteristic between the inflection point and a leading wafer edge.
摘要翻译： 方法和化学机械平面化中去除速率特性的压板控制参数，同时允许低成本抛光垫特别用于快速边缘操作，并且同时减少用于支撑抛光垫的流体的量。 压板配置提供流体压力控制以减少来自抛光垫下方的流体的泄漏，并且有助于控制去除速率特性的拐点的位置。 另一种配置控制拐点和前缘晶片边缘之间的去除速率特性的一部分的形状。
-
2.发明授权公开(公告)号：US06752898B1
公开(公告)日：2004-06-22
申请号：US10327565
申请日：2002-12-20
IPC分类号： B24B2100
摘要： An invention is provided for a CMP apparatus that enhances removal rate uniformity. The CMP apparatus includes a polishing belt disposed below a carrier head that is capable of applying a wafer to the polishing belt. Also included is a platen disposed below the polishing belt. The platen includes a circular shim section disposed on the top surface of the platen. The circular shim section is higher than the top surface of the platen. When using this configuration, increasing pressure to the backside of the polishing belt decreases the edge removal rate of the wafer. Conversely, decreasing pressure to the backside of the polishing belt increases the edge removal rate of the wafer.
摘要翻译： 提供了一种用于增强去除速率均匀性的CMP设备的发明。 CMP装置包括设置在能够将晶片施加到抛光带的载体头下方的抛光带。 还包括设置在抛光带下方的压板。 压盘包括设置在压板的顶表面上的圆形垫片部分。 圆形垫片部分高于压板的顶部表面。 当使用这种配置时，增加对抛光带背面的压力降低了晶片的边缘去除速率。 相反，降低抛光带背面的压力增加了晶片的边缘去除率。
-
搜索结果
2 条记录 (耗时 0.021 秒)
