公开(公告)号：US08268118B2

公开(公告)日：2012-09-18

申请号：US12711420

申请日：2010-02-24

申请人： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

发明人： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

IPC分类号： H01L21/3065

CPC分类号： C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

公开(公告)号：US20100148317A1

公开(公告)日：2010-06-17

申请号：US12711420

申请日：2010-02-24

申请人： Sangheon LEE ,  Dae-Han CHOI ,  Jisoo KIM ,  Peter CIRIGLIANO ,  Zhisong HUANG ,  Robert CHARATAN ,  S.M. Reza SADJADI

发明人： Sangheon LEE ,  Dae-Han CHOI ,  Jisoo KIM ,  Peter CIRIGLIANO ,  Zhisong HUANG ,  Robert CHARATAN ,  S.M. Reza SADJADI

IPC分类号： H01L29/30 ,  H01L21/768 ,  C23F1/08

CPC分类号： C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

摘要翻译： 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

公开(公告)号：US07479457B2

公开(公告)日：2009-01-20

申请号：US11220710

申请日：2005-09-08

申请人： Cristian Paduraru ,  Alan Jensen ,  David Schaefer ,  Robert Charatan ,  Tom Choi

发明人： Cristian Paduraru ,  Alan Jensen ,  David Schaefer ,  Robert Charatan ,  Tom Choi

IPC分类号： H01L21/461

CPC分类号： G03F7/427

摘要： Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.

摘要翻译： 在氧气剥离等离子体中产生的原子氧在电介质蚀刻残留物的剥离期间与低k电介质材料反应并损坏。 尽管在剥离电介质后蚀刻残留物时低k电介质材料的损伤随氢气剥离等离子体而降低，但氢气剥离等离子体显示较低的剥离速率。 在氢气剥离等离子体中包含氧气可改善光致抗蚀剂剥离速率和均匀性，同时保持氢气与氧气的比例可以避免低k电介质材料损坏。

公开(公告)号：US20060223327A1

公开(公告)日：2006-10-05

申请号：US11094559

申请日：2005-03-29

申请人： Jisoo Kim ,  Sangheon Lee ,  Binet Worsham ,  Robert Charatan ,  S.M. Sadjadi

发明人： Jisoo Kim ,  Sangheon Lee ,  Binet Worsham ,  Robert Charatan ,  S.M. Sadjadi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116

摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.

摘要翻译： 提供了一种在衬底上蚀刻电介质层的方法。 在电介质层上形成光致抗蚀剂掩模。 将基板放置在等离子体处理室中。 包含NF 3 N的蚀刻剂气体被提供到等离子体室中。 从NF 3 N气体形成等离子体。 通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

公开(公告)号：US08340827B2

公开(公告)日：2012-12-25

申请号：US12477196

申请日：2009-06-03

申请人： Gunsu Yun ,  Iqbal A. Shareef ,  Kurt Jorgensen ,  Robert Charatan

发明人： Gunsu Yun ,  Iqbal A. Shareef ,  Kurt Jorgensen ,  Robert Charatan

IPC分类号： G05D7/00 ,  G05D11/00 ,  G05D9/00 ,  G06F19/00 ,  G01F1/12 ,  F16K31/36 ,  B67D7/00

CPC分类号： G05D7/0635 ,  Y10T137/7761

摘要： A method for establishing a mass flow controller (MFC) control scheme, which is configured for reducing a time scale for gas delivery into a processing chamber, for a recipe is provided. The method includes identifying a set of delayed gas species utilized during execution of the recipe with a set of delivery time slower than a target delivery time scale. The method also includes establishing an initial overshoot strength and an initial overshoot duration for each gas specie of the set of delayed gas species. The method further includes establishing MFC control scheme by adjusting an MFC hardware for each gas specie during the execution of the recipe. Adjusting the MFC hardware includes applying the initial overshoot strength for the initial overshoot duration to determine if the MFC control scheme provides for each gas specie a pressure profile within a target accuracy of an equilibrium pressure for the processing chamber.

摘要翻译： 提供了一种用于建立质量流量控制器（MFC）控制方案，其被配置为用于减少用于配方的气体输送到处理室中的时间标度。 该方法包括在具有比目标递送时间标度慢的一组递送时间的情况下识别在执行配方期间使用的一组延迟气体种类。 该方法还包括为该组延迟气体种类的每种气体物质建立初始过冲强度和初始过冲持续时间。 该方法还包括在执行配方期间通过调整每种气体样品的MFC硬件来建立MFC控制方案。 调整MFC硬件包括对初始过冲持续时间应用初始过冲强度，以确定MFC控制方案是否为每种气体提供在处理室的平衡压力的目标精度内的压力分布。

公开(公告)号：US20120279656A9

公开(公告)日：2012-11-08

申请号：US12192077

申请日：2008-08-14

申请人： Robert Charatan

发明人： Robert Charatan

IPC分类号： H01L21/306

CPC分类号： H01L21/0273 ,  G03F7/40

摘要： A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.

摘要翻译： 用于形成特征的系统包括在下层上形成第一材料的掩模，所述掩模具有不正确的轮廓。 校正掩模的轮廓并且在下层中形成特征。 还公开了形成特征的方法。

公开(公告)号：US07427458B2

公开(公告)日：2008-09-23

申请号：US11173733

申请日：2005-06-30

申请人： Robert Charatan

发明人： Robert Charatan

IPC分类号： G03F1/00

CPC分类号： H01L21/0337 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： A method of forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A system for forming a feature is also disclosed.

摘要翻译： 形成特征的方法包括在下层上形成第一材料的掩模，掩模具有不正确的轮廓。 校正掩模的轮廓并且在下层中形成特征。 还公开了一种用于形成特征的系统。

公开(公告)号：US20070243713A1

公开(公告)日：2007-10-18

申请号：US11402601

申请日：2006-04-12

申请人： Robert Charatan

发明人： Robert Charatan

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/76814 ,  H01J37/32192 ,  H01J37/3233 ,  H01J2237/334 ,  H01L21/31138

摘要： A microwave source is used to create activated hydrogen in its ground state. An electron gun is used to boost the activated hydrogen into a metastable state by electron bombardment. The metastable activated hydrogen may then be used in a plasma etch to remove residue from a low k material.

摘要翻译： 微波源用于在其基态产生活性氢。 电子枪用于通过电子轰击将活化的氢气升压成亚稳态。 然后可以将亚稳活性氢用于等离子体蚀刻以从低k材料中除去残余物。

公开(公告)号：US06955588B1

公开(公告)日：2005-10-18

申请号：US10816431

申请日：2004-03-31

申请人： Robert L. Anderson, II ,  Robert Charatan

发明人： Robert L. Anderson, II ,  Robert Charatan

IPC分类号： B24B1/00 ,  B24B37/04

CPC分类号： B24B37/12

摘要： Methods and a platen control parameters of a removal rate characteristic in chemical mechanical planarization, while allowing a low-cost polishing pad to be used especially in fast edge operations, and while reducing the amount of fluid used to support the polishing pad. Platen configuration provides fluid pressure control to reduce leakage of fluid from beneath the polishing pad, and contributes to control of a location of an inflection point of the removal rate characteristic. Another configuration controls a shape of a section of the removal rate characteristic between the inflection point and a leading wafer edge.

摘要翻译： 方法和化学机械平面化中去除速率特性的压板控制参数，同时允许低成本抛光垫特别用于快速边缘操作，并且同时减少用于支撑抛光垫的流体的量。 压板配置提供流体压力控制以减少来自抛光垫下方的流体的泄漏，并且有助于控制去除速率特性的拐点的位置。 另一种配置控制拐点和前缘晶片边缘之间的去除速率特性的一部分的形状。

公开(公告)号：US06899594B1

公开(公告)日：2005-05-31

申请号：US10813754

申请日：2004-03-30

申请人： Robert Charatan ,  Dae J. Lim ,  Peter Norton

发明人： Robert Charatan ,  Dae J. Lim ,  Peter Norton

IPC分类号： B24B21/04 ,  B24B21/10 ,  B24B21/20 ,  B24B37/04 ,  B24B49/00

CPC分类号： B24B21/10 ,  B24B21/04 ,  B24B21/20 ,  B24B37/11

摘要： Apparatus and methods are disclosed that promote greater polishing uniformity in linear CMP systems by introducing a relative lateral motion between a CMP belt and a rotating polish head securing a wafer. A belt polish module comprises a linear CMP belt forming a loop around an idle roller and a drive roller, first and second pistons engaging, respectively, first and second ends of the idle roller, and a controller configured to vary the forces applied by the first and second pistons to the ends of the idle roller in order to laterally translate the linear CMP belt. A method for linear CMP comprises rotating a wafer about a vertical axis, contacting the rotating wafer against a linear CMP belt moving in a longitudinal direction, and causing a relative lateral motion between the rotating wafer and the linear CMP belt.

摘要翻译： 公开了通过在CMP带和固定晶片的旋转抛光头之间引入相对横向运动来促进线性CMP系统中更大抛光均匀性的装置和方法。 皮带抛光模块包括形成围绕空转辊和驱动辊的环的线性CMP带，第一和第二活塞分别与空转辊的第一和第二端接合，以及控制器，其被配置为改变由第一 和第二活塞到空转辊的端部，以横向平移线性CMP带。 用于线性CMP的方法包括绕垂直轴旋转晶片，使旋转晶片抵靠沿纵向移动的线性CMP带，并且在旋转晶片和线性CMP带之间引起相对的横向运动。