Laser diode array with phase correction
    1.
    发明授权
    Laser diode array with phase correction 失效
    具有相位校正的激光二极管阵列

    公开(公告)号:US4699465A

    公开(公告)日:1987-10-13

    申请号:US829422

    申请日:1986-02-13

    摘要: A laser diode array produces one set of beams that are out of phase with those of another set of beams, with the beams of one set alternating with those of the other. The phase plate has first and second sets of regions, with the regions of one set alternating with those of the other. The phase plate is positioned in the near field of the beam pattern such that one set of beams passes through one set of regions and the other set of beams passes through the other set of regions. One set of regions changes the phase of the beams passing therethrough to create a substantially single lobed beam pattern in the far field.

    摘要翻译: 激光二极管阵列产生与另一组光束不同相的一组光束,其中一组光束与另一组光束交替。 相位板具有第一和第二组区域,其中一组区域与另一组区域交替。 相位板位于波束图案的近场中,使得一组光束穿过一组区域,另一组光束穿过另一组区域。 一组区域改变穿过其中的光束的相位,以在远场中产生基本上单个的叶状波束图案。

    Staggered quadrature phase shift keyed laser modulator
    2.
    发明授权
    Staggered quadrature phase shift keyed laser modulator 失效
    交错正交相移键控激光调制器

    公开(公告)号:US4904963A

    公开(公告)日:1990-02-27

    申请号:US271882

    申请日:1988-11-16

    申请人: Jeffrey R. Heidel

    发明人: Jeffrey R. Heidel

    IPC分类号: H04L27/20

    CPC分类号: H04L27/2096

    摘要: A staggered quadrature phase shift keyed modulator which avoids the need for timing circuits. Three phase modulators serially change the phase of a laser beam so that it may sequentially have a total phase shift of .pi., .pi./2, 0, -.pi./2. The input signal is divided into two pulse trains, one of which is delayed to provide the stagger. The two pulse trains are logically combined to form three control signals for the modulators.

    摘要翻译: 交错的正交相移键控调制器,避免了定时电路的需要。 三相调制器串联改变激光束的相位,使得它可以顺序地具有pi,pi / 2,0,-π/ 2的总相移。 输入信号被分为两个脉冲串,其中一个被延迟以提供交错。 逻辑上组合两个脉冲串以形成调制器的三个控制信号。

    Rib etched lens
    3.
    发明授权
    Rib etched lens 失效
    肋蚀刻镜片

    公开(公告)号:US5222095A

    公开(公告)日:1993-06-22

    申请号:US860162

    申请日:1992-03-30

    IPC分类号: G02B6/124

    CPC分类号: G02B6/1245

    摘要: A semiconductor device structure capable of expanding a laser beam in one-dimension, collimating an expanding beam or focusing a nearly collimated beam. This semiconductor structure is typically comprised of three portions: a rib waveguide portion to propagate a beam of light in the quantum well region beneath the rib, an expansion region which incorporates a wider rib structure to allow the propagating beam to expand, and a rib etched lens portion to collimate the expanded beam of light. The shape of the rib etched lens portion is determined by Fermat's principle such that the optical pathlengths travelled by each ray of light are equated at a collimation plane positioned tangentially with the surface of the rib etched lens at the point at which an on-axis beam of light would strike the surface of the rib etched lens. Once the surface of the rib etched lens has been determined by Fermat's principle, the actual, maximum width of the rib etched lens is determined by Snell's law because at some point the amount of divergence is so great that the ray of light exiting the rib etched lens surface is not able to be refracted parallel to an on-axis ray. The rib etched lens may be utilized in alternative configurations requiring a lens element to focus and collimate light propagating therein. Such alternative configurations include the use of a pair of rib etched lenses positioned about a waveguide segment and a pair of expansion segments to form a laser resonator.

    摘要翻译: 一种半导体器件结构,其能够一维地扩展激光束,准直扩展光束或聚焦几乎准直的光束。 该半导体结构通常包括三个部分:肋波导部分,用于传播肋下的量子阱区域中的光束,扩展区域,其包含较宽的肋结构以允许传播光束膨胀;以及肋蚀刻 透镜部分以准直扩展的光束。 肋蚀刻透镜部分的形状由费马原理决定,使得由每条光线行进的光程长度等于在与轴蚀刻透镜的表面相切定位的准直平面上, 的光会撞击肋蚀刻透镜的表面。 一旦肋状蚀刻透镜的表面已经通过费马原理确定,肋蚀刻透镜的实际最大宽度由斯涅耳定律确定,因为在某些点处,发散量如此之大以致于离开肋的光线被蚀刻 透镜表面不能平行于轴上光线折射。 肋蚀刻透镜可以用于需要透镜元件聚焦和准直其中传播的光的替代配置。 这种替代配置包括使用位于波导段和一对扩展段周围的一对肋蚀刻透镜来形成激光谐振器。