公开(公告)号：US5023200A

公开(公告)日：1991-06-11

申请号：US274892

申请日：1988-11-22

申请人： Robert S. Blewer ,  Terry R. Gullinger ,  Michael J. Kelly ,  Sylvia S. Tsao

发明人： Robert S. Blewer ,  Terry R. Gullinger ,  Michael J. Kelly ,  Sylvia S. Tsao

IPC分类号： H01L21/306 ,  H01L21/74 ,  H01L21/762

CPC分类号： H01L21/743 ,  H01L21/306 ,  H01L21/76245 ,  Y10S438/96

摘要： A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

摘要翻译： 一种形成用于半导体集成电路的多层多孔硅衬底的方法，包括多层硅衬底的阳极氧化非多孔硅层以形成多层次的多孔硅。 然后至少一个多孔硅层被氧化以形成绝缘层，并且绝缘层下面的至少一个多孔硅层被金属化以形成掩埋的导电层。 优选地，绝缘层和导电层由由无孔硅形成的阳极氧化屏障分开。 通过蚀刻通过阳极氧化屏障并随后形成金属化导电层，可以在单晶硅下制造完全或部分绝缘的掩埋导体。