公开(公告)号：US20140038102A1

公开(公告)日：2014-02-06

申请号：US13956100

申请日：2013-07-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Jong Keun PARK ,  Christopher Nam LEE ,  Cecily ANDES ,  Deyan WANG

IPC: G03F7/038 ,  G03F7/20

CPC classification number: G03F7/038 ,  G03F7/004 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/30

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 光致抗蚀剂组合物包括一种或多种包含碱性部分并且与抗蚀剂的树脂组分基本上不可混溶的聚合物添加剂。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20150185607A1

公开(公告)日：2015-07-02

申请号：US14588404

申请日：2014-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Jong Keun PARK ,  Christopher Nam LEE ,  Cecily ANDES ,  Choong-Bong LEE

IPC: G03F7/038

CPC classification number: G03F7/11 ,  G03F7/091

Abstract: Photoresist overcoat compositions comprise: a quenching polymer wherein the quenching polymer comprises: a first unit having a basic moiety; and a second unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and an organic solvent; wherein the quenching polymer is present in the composition in an amount of from 80 to 100 wt % based on total solids of the overcoat composition The compositions have particular applicability in the semiconductor manufacturing industry to negative tone development (NTD) lithographic processes.

Abstract translation: 光刻胶外涂层组合物包括：骤冷聚合物，其中淬灭聚合物包含：具有碱性部分的第一单元; 和由以下通式（I）的单体形成的第二单元：其中：R 1选自氢和取代或未取代的C 1至C 3烷基; R2选自取代和未取代的C1至C15烷基; X是氧，硫或由式NR3表示，其中R3选自氢和取代和未取代的C1至C10烷基; 和Z是选自任选取代的脂族和芳族烃的单键或间隔单元及其组合，任选地具有一个或多个选自-O - ， - S - ， - COO-和-CONR 4 - 的连接部分，其中R 4是 选自氢和取代和未取代的C1至C10烷基; 和有机溶剂; 其中基于外涂层组合物的总固体，淬灭聚合物以组合物中的80至100重量％的量存在。组合物在半导体制造业中具有对负色调发展（NTD）光刻工艺的特别适用性。

公开(公告)号：US20160103393A1

公开(公告)日：2016-04-14

申请号：US14881760

申请日：2015-10-13

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Jong Keun PARK ,  Christopher Nam LEE ,  Cecily ANDES ,  Deyan WANG

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/038 ,  G03F7/004 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/30

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract translation: 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 光致抗蚀剂组合物包括一种或多种包含碱性部分并且与抗蚀剂的树脂组分基本上不可混溶的聚合物添加剂。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。

公开(公告)号：US20150185615A1

公开(公告)日：2015-07-02

申请号：US14588396

申请日：2014-12-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Jong Keun PARK ,  Christopher Nam LEE ,  Cecily ANDES ,  Choong-Bong LEE

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30

Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Abstract translation: 形成电子器件的方法，其顺序包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一个或多个层上形成光致抗蚀剂层，其中光致抗蚀剂层由组合物形成，所述组合物包括：包含具有酸不稳定基团的单元的基质聚合物; 光致酸发生器; 和有机溶剂; （c）在光致抗蚀剂层上涂覆光致抗蚀剂外涂层组合物，其中外涂层组合物包含淬火聚合物和有机溶剂，其中淬灭聚合物包含具有碱性部分的单元，其有效地中和由表面区域中的光酸产生剂产生的酸 的光致抗蚀剂层; （d）将光致抗蚀剂层暴露于活化辐射; （e）在曝光后烘烤过程中加热基材; 和（f）用有机溶剂显影剂显影曝光的膜。 该方法在半导体制造业中具有特殊的适用性。