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公开(公告)号：US4475931A
公开(公告)日：1984-10-09
申请号：US196339
申请日：1980-10-14
申请人： Roland Clift , Mojtaba Ghadiri , Michael J. Cooke
发明人： Roland Clift , Mojtaba Ghadiri , Michael J. Cooke
摘要： This invention relates to a method for the production of gases free from particulate contaminants, for use in driving gas turbines without causing fouling or corrosion of the blading.The method comprises feeding a gas contaminated with particulate material, for instance produced by the combustion or gasification of coal, and a tackifying material, such as a crackable hydrocarbon or an inorganic compound, to a collection medium, preferably a fluidized particle bed, maintained at a temperature whereat the tackifying material becomes sticky and is deposited on the collection medium. The contaminants are removed by becoming stuck thereon.
摘要翻译： 本发明涉及一种用于生产不含颗粒污染物的气体的方法，用于驱动燃气涡轮机而不引起堰塞的污垢或腐蚀。 该方法包括将例如由煤的燃烧或气化产生的微粒材料和可裂解烃或无机化合物等增粘材料污染的气体送入收集介质，优选流化颗粒床，保持在 其中增粘材料变粘并沉积在收集介质上的温度。 污染物通过卡在其上而被去除。
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公开(公告)号：US5183402A
公开(公告)日：1993-02-02
申请号：US699577
申请日：1991-05-14
IPC分类号： H01L21/203 , F27D3/00 , F27D5/00 , F27D7/06 , F27D99/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/324 , H01L21/683
CPC分类号： F27D5/00 , F27D2003/0068 , F27D2007/066 , F27D2099/0061
摘要： An apparatus for supporting a workpiece has an enclosure, a means for reducing the pressure and a platen on which the workpiece is mounted. A heating mechanism is located within the platen and the platen is coated with a high emissivity material, which facilitates the radiative heat transfer between the platen and the workpiece. Consequently, the workpiece can be rapidly raised to a specific temperature. This apparatus is particularly applicable to the supporting of a semiconductor wafer within a vacuum system.
摘要翻译： 用于支撑工件的装置具有外壳，用于降低压力的装置和在其上安装工件的压板。 加热机构位于压板内，并且压板涂覆有高辐射率材料，这有助于压板和工件之间的辐射热传递。 因此，工件可以快速升高到特定的温度。 该装置特别适用于真空系统内的半导体晶片的支撑。
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公开(公告)号：US4488506A
公开(公告)日：1984-12-18
申请号：US388774
申请日：1982-06-15
CPC分类号： C23C16/44
摘要： An apparatus for depositing metal or alloy films by a thermal decomposition process on a substrate includes a furnace having a number of selectively heated zones. The temperature of each zone is controllable so as to provide compensation for changes in the concentration of reactant materials in the different regions of the furnace. Means are provided for the safe handling of highly pyrophoric organometallic reactants. The apparatus may be used for the deposition of aluminium/silicon alloy films on semiconductor wafers in the manufacture of integrated circuits.
摘要翻译： 通过热分解方法在衬底上沉积金属或合金膜的设备包括具有多个选择性加热区的炉。 每个区域的温度是可控的，以便为炉子的不同区域中的反应物料的浓度变化提供补偿。 提供了用于安全处理高度发火的有机金属反应物的方法。 该装置可用于在集成电路的制造中在半导体晶片上沉积铝/硅合金膜。
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