公开(公告)号：US20190235395A1

公开(公告)日：2019-08-01

申请号：US16376673

申请日：2019-04-05

申请人： ASML NETHERLANDS B.V.

发明人： Raymond Wilhelmus Louis LAFARRE ,  Nicolaas TEN KATE ,  Nina Vladimirovna DZIOMKINA ,  Yogesh Pramod KARADE

IPC分类号： G03F7/20 ,  C23C16/44 ,  H01L21/687

CPC分类号： G03F7/70716 ,  C23C16/44 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70975 ,  H01L21/6875 ,  Y10T29/49

摘要： A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

公开(公告)号：US20190211448A1

公开(公告)日：2019-07-11

申请号：US16328269

申请日：2017-04-24

申请人： THE JAPAN STEEL WORKS, LTD.

发明人： Keisuke WASHIO ,  Tatsuya MATSUMOTO

IPC分类号： C23C16/455 ,  H01L21/02

CPC分类号： C23C16/45544 ,  C23C16/44 ,  C23C16/45527 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31 ,  H01L51/50 ,  H05B33/04 ,  H05B33/10

摘要： An atomic layer deposition apparatus includes: a film-forming container 11 in which a film-forming process is performed; a vertically movable stage 14 provided in the film-forming container 11 and being configured to hold a substrate 100; a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the stage 14, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed; a peripheral stage deposition prevention member 15 covering a peripheral portion of the stage 14; and a stage stopper deposition prevention member 24 provided on the stage stopper 17.

公开(公告)号：US20180320987A1

公开(公告)日：2018-11-08

申请号：US16030160

申请日：2018-07-09

申请人： BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM

发明人： Alexandre K. Da Silva ,  Evan Fleming ,  Li Shi ,  Christopher W. Bielawski ,  Rodney S. Ruoff ,  Shaoyi Wen ,  Hengxing Ji ,  Michael Pettes ,  Abhijit Paul ,  Eunsu Paek ,  Alexander J. Pak ,  Daniel P. Sellan

IPC分类号： F28D20/02 ,  F28F13/00 ,  B60L11/18 ,  C09K5/06 ,  C23C16/44 ,  F28D7/08 ,  C01B32/16 ,  H01M4/62

CPC分类号： F28D20/021 ,  B60L11/1829 ,  B60L2270/44 ,  C01B32/16 ,  C01B2202/24 ,  C01B2202/34 ,  C01B2202/36 ,  C09K5/063 ,  C23C16/44 ,  F28D7/082 ,  F28D20/023 ,  F28F13/003 ,  H01M4/625 ,  Y02E60/145 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/12 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/125 ,  Y02T90/14

摘要： Sugar alcohol blends of galactitol and mannitol and compositions comprising such blends are disclosed as phase change materials (PCMs). A method of forming carbon nanotubes on a carbon substrate is described. Carbon substrates with carbon nanotubes, in particular, conformal layers of carbon nanotubes on carbon substrates, are also disclosed, as are methods of making and using these materials. Thermal storage units are also provided. The thermal storage units can comprise a heat exchange path through which a heat exchange medium flows, and a thermal storage medium in thermal contact with the heat exchange path.

公开(公告)号：US20180315960A1

公开(公告)日：2018-11-01

申请号：US15686259

申请日：2017-08-25

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： HAO-MING WEI ,  YANG WEI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC分类号： H01L51/56 ,  C23C14/24 ,  C23C16/44 ,  B05D1/00 ,  H01L51/00

CPC分类号： H01L51/56 ,  B05D1/60 ,  C23C14/24 ,  C23C16/44 ,  H01L51/0007 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092

摘要： A method for forming an organic light emitting diode array is provided. A substrate is provided. A plurality of first electrodes is formed on a substrate surface. A patterned mask layer is disposed on the substrate surface to cover the substrate and expose at least a portion of each first electrode. An evaporating source is provided. The evaporating source comprises a carbon nanotube film structure and an organic semiconductor material. The evaporating source is spaced from the plurality of first electrodes. The carbon nanotube film structure is heated to gasify the organic light emitting material and form a plurality of organic light emitting layers on a exposed surface of the plurality of first electrodes. A plurality of second electrodes are formed on a surface of the plurality of organic light emitting layers. The patterned mask layer is removed to form an organic light emitting diode array.

公开(公告)号：US20180291502A1

公开(公告)日：2018-10-11

申请号：US16008825

申请日：2018-06-14

申请人： Hitachi Kokusai Electric Inc.

发明人： Naoko KITAGAWA ,  Yuichi WADA

IPC分类号： C23C16/448 ,  H01L21/31 ,  C23C16/52 ,  C23C16/44

CPC分类号： C23C16/448 ,  C23C14/12 ,  C23C14/543 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/31

摘要： A storage device includes: a sidewall formed in a cylindrical shape; a cover wall disposed at an upper end of the sidewall; a bottom wall connected to a lower end of the sidewall and comprising a mounting surface mountable on a weight detector; a storage chamber surrounded by the sidewall, the cover wall, and the bottom wall; a recess communicating with the storage chamber and provided at the bottom wall; a communication pipe having one end connected to a bottom portion of the recess in a direction of gravity and the other end extending in a direction different from the direction of gravity in the bottom wall, the communication pipe having a diameter smaller than that of the recess; a gas flow path provided at a wall other than the bottom wall; and a liquid discharge path connected to a downstream side of the communication pipe.

公开(公告)号：US20180284625A1

公开(公告)日：2018-10-04

申请号：US15994492

申请日：2018-05-31

申请人： ASML NETHERLANDS B.V.

发明人： Raymond Wilhelmus Louis LAFARRE ,  Nicolaas TEN KATE ,  Nina Vladimirovna DZIOMKINA ,  Yogesh Pramod KARADE

IPC分类号： G03F7/20 ,  H01L21/687 ,  C23C16/44

CPC分类号： G03F7/70716 ,  C23C16/44 ,  G03F7/70341 ,  G03F7/707 ,  G03F7/70975 ,  H01L21/6875 ,  Y10T29/49

摘要： A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

公开(公告)号：US10076789B2

公开(公告)日：2018-09-18

申请号：US15121305

申请日：2015-02-25

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Makoto Igarashi ,  Akihiro Murakami

IPC分类号： B32B27/14 ,  B23B27/14 ,  C23C16/30 ,  C23C16/02 ,  C23C16/34 ,  C23C16/36 ,  C23C28/00 ,  C23C16/32 ,  C23C16/44 ,  C22C29/04 ,  B22F5/00

CPC分类号： B23B27/148 ,  B22F2005/001 ,  B23B2222/16 ,  B23B2224/28 ,  B23B2224/32 ,  B23B2224/36 ,  B23B2228/04 ,  B23B2228/105 ,  C22C29/04 ,  C23C16/0281 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/44 ,  C23C28/321 ,  C23C28/34 ,  C23C28/341 ,  C23C28/3455 ,  C23C28/347

摘要： A surface-coated titanium carbonitride-based cermet cutting tool is a surface-coated TiCN-based cermet cutting tool in which a Ti compound layer that is a hard coating layer is deposited as a first layer on the surface of a TiCN-based cermet body containing W and Mo, and a Mo-enriched layer having an average thickness of 0.5 to 10 nm is formed at an interface between a TiCN phase of the body and the hard coating layer.

公开(公告)号：US20180195171A1

公开(公告)日：2018-07-12

申请号：US15863700

申请日：2018-01-05

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Jian Fei SHEN ,  Yang WANG

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： C23C16/4411 ,  C23C14/541 ,  C23C16/44 ,  C23C16/463 ,  C23C16/52 ,  C23C18/1691

摘要： A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.

公开(公告)号：US10008372B2

公开(公告)日：2018-06-26

申请号：US15117603

申请日：2014-02-19

申请人： Sakai Display Products Corporation

发明人： Hirokazu Imahara ,  Yasuhiro Wakamori

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  H01J37/34 ,  C23C14/56 ,  C23C16/44 ,  C23C14/22

CPC分类号： H01J37/3441 ,  C23C14/22 ,  C23C14/564 ,  C23C16/44 ,  C23C16/4404 ,  H01J37/34 ,  H01J37/3411

摘要： A film deposition apparatus, comprising: a deposition preventive plate which is located in a processing chamber performing film deposition processing on a substrate so as to surround a processing region in the processing chamber for processing on the substrate, and which prevents a film deposition material from being attached to an inner wall of the processing chamber, wherein the deposition preventive plate is configured by arranging a plurality of component plates of which respective end portions are overlapped with each other at a gap, such that a thermal expansion generated due to the film deposition processing is absorbed by a relative movement of an overlapped part in two adjacent component plates of the plurality of component plates in a width direction of the overlapped part, and a concave part is provided at the overlapped part to make the gap provided in a side communicating with the processing region be larger than that provided in the other side, thin parts provided in the respective end portions of the two adjacent component plates are overlapped with each other, and a surface facing the processing region in the overlapped part and a surface facing the processing region in non-overlapped part are on the same plane, and a surface facing the inner wall in the overlapped part and a surface facing the inner wall in non-overlapped part are on the same plane.

公开(公告)号：US09976213B2

公开(公告)日：2018-05-22

申请号：US14781622

申请日：2014-04-16

申请人： Walter AG

发明人： Dirk Stiens ,  Sakari Ruppi ,  Thorsten Manns

IPC分类号： C23C16/34 ,  C23C16/44

CPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/45508

摘要： A tool having a base body of carbide, cermet, ceramic, steel or high speed steel and a single-layer or multi-layer wear-protection coating applied thereto in a CVD process, wherein the wear-protection coating has at least one Ti1-xAlxCyNz layer having stoichiometry coefficients 0.70≤x 1+h (ln h)2, wherein h is the thickness of the Ti1-xAlxCyNz layer in micrometer.