公开(公告)号：US20080308868A1

公开(公告)日：2008-12-18

申请号：US11763911

申请日：2007-06-15

申请人： Rong-Tzong Wu ,  Guan-Quan Chen ,  Hsin Tai ,  Am-Tay Luy ,  Pao-An Chang

发明人： Rong-Tzong Wu ,  Guan-Quan Chen ,  Hsin Tai ,  Am-Tay Luy ,  Pao-An Chang

IPC分类号： H01L23/62 ,  H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/2255 ,  H01L29/0653 ,  H01L29/66568

摘要： A high voltage metal oxide semiconductor includes a doped substrate, two first isolation structures, a gate structure, a source region, a drain region, two second isolation structures, and two drift regions. The two first isolation structures are respectively disposed in the doped substrate. The gate structure is disposed between parts of the two first isolation structures on the doped substrate. The source region and the drain region are respectively disposed beside one side of each of the two first isolation structures in the doped substrate. The top surface of the second isolation structure is smaller than the bottom surface of the first isolation structure. The two drift regions are respectively disposed in the doped substrate, enclosing the source region and the drain region, the two first isolation structures and the second isolation structures.

摘要翻译： 高电压金属氧化物半导体包括掺杂衬底，两个第一隔离结构，栅极结构，源极区，漏极区，两个第二隔离结构和两个漂移区。 两个第一隔离结构分别设置在掺杂衬底中。 栅极结构设置在掺杂衬底上的两个第一隔离结构的部分之间。 源极区域和漏极区域分别设置在掺杂衬底中的两个第一隔离结构中的每一个的旁边。 第二隔离结构的顶表面小于第一隔离结构的底表面。 两个漂移区分别设置在掺杂衬底中，包围源极区和漏极区，两个第一隔离结构和第二隔离结构。