公开(公告)号：US09783411B1

公开(公告)日：2017-10-10

申请号：US15349607

申请日：2016-11-11

申请人： Rosemount Aerospace Inc.

发明人： David P. Potasek ,  Sean Houlihan

IPC分类号： H01L29/49 ,  B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0086 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00269 ,  B81C2201/013 ,  G01L9/0073

摘要： A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.