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公开(公告)号:US20190144264A1
公开(公告)日:2019-05-16
申请号:US15811471
申请日:2017-11-13
申请人: InvenSense, Inc.
发明人: Ilya Gurin , Joseph Seeger , Matthew Thompson
CPC分类号: B81B3/0013 , B81B3/0008 , B81B3/0027 , B81B3/0086 , B81B2201/0235 , B81B2203/04 , B81B2203/055 , B81C99/003 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P21/00 , G01P2015/0808
摘要: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.
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公开(公告)号:US20180265349A1
公开(公告)日:2018-09-20
申请号:US15914979
申请日:2018-03-07
发明人: Hisahiro ITO
CPC分类号: B81B7/0058 , B81B3/0024 , B81B3/0086 , B81B7/007 , H03B5/32 , H03H9/0519 , H03H9/0533 , H03H9/0547 , H03H9/1021 , H03H9/19
摘要: A vibrator device includes a base, a vibrator that includes a vibrator element and a vibrator element package, which accommodates the vibrator element and has a first terminal on a surface on a base side, a circuit element that is disposed between the base and the vibrator and has a first connection pad on a surface on a vibrator side, and a conductive connecting member that is disposed between the circuit element and the vibrator, bonds the circuit element and the vibrator together, and electrically connects the first connection pad and the first terminal together.
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3.
公开(公告)号:US20180243792A1
公开(公告)日:2018-08-30
申请号:US15905289
申请日:2018-02-26
CPC分类号: B06B1/0292 , B81B3/0086 , B81C1/00698 , B81C2201/0173 , B81C2201/115 , B81C2203/038 , G01N29/2406
摘要: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.
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公开(公告)号:US10000374B2
公开(公告)日:2018-06-19
申请号:US15506068
申请日:2015-06-23
申请人: Robert Bosch GmbH
CPC分类号: B81B3/0086 , B81B2201/01 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/0136 , B81C1/00801
摘要: A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si1-x-yCxNy)-based layer.
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公开(公告)号:US20180152792A1
公开(公告)日:2018-05-31
申请号:US15826255
申请日:2017-11-29
CPC分类号: H04R9/08 , B81B3/0086 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , H04R19/005 , H04R19/04 , H04R29/004 , H04R2201/003
摘要: A MEMS transducer comprising: a flexible membrane, the flexible membrane comprising a first membrane electrode; a back plate, the back plate comprising a first back plate electrode; wherein the back plate is supported in a spaced relation with respect to the flexible membrane. The MEMS transducer is configured to provide electrical connections to the first membrane electrode and the first back plate electrode. The flexible membrane further comprises a second membrane electrode, the second membrane electrode being electrically isolated from the first membrane electrode, wherein the first membrane electrode and the second membrane electrode are arranged to reduce variation in electrostatic forces across the flexible membrane.
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公开(公告)号:US20180079640A1
公开(公告)日:2018-03-22
申请号:US15700179
申请日:2017-09-11
CPC分类号: B81B3/0013 , B81B3/0086 , B81B7/0006 , B81B7/008 , B81C1/00206 , B81C1/00936 , H01H1/0036 , H01H59/0009 , H01H2001/0078
摘要: Systems and methods for forming an electrostatic MEMS switch that is used to switch a source of current or voltage. At least one surface of the MEMS switch may be rotated on approach to another substrate, such that when the surfaces are separated, the forces are shearing forces rather than static frictional forces.
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公开(公告)号:US09921238B2
公开(公告)日:2018-03-20
申请号:US14836558
申请日:2015-08-26
发明人: Tamio Ikehashi
IPC分类号: G01P15/125 , B81B3/00 , B81C1/00 , G01P15/18 , G01P15/08
CPC分类号: G01P15/125 , B81B3/0086 , B81B2201/0235 , B81B2201/0264 , B81B2203/0136 , B81C1/00166 , G01L9/0048 , G01L9/0073 , G01L19/0618 , G01L19/146 , G01P15/18 , G01P2015/084 , G01P2015/0865
摘要: According to one embodiment, a sensor is disclosed. The sensor includes a substrate, a first fixed electrode arranged on the substrate, a movable electrode arranged above the first fixed electrode and being movable non-parallely, a second fixed electrode arranged above the movable electrode. The sensor further includes a detector to detect a difference between a first capacitance between the first fixed electrode and the movable electrode and a second capacitance between the movable electrode and the second fixed electrode.
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公开(公告)号:US09793080B2
公开(公告)日:2017-10-17
申请号:US15240799
申请日:2016-08-18
申请人: INOSO, LLC
发明人: Kiyoshi Mori , Ziep Tran , Giang Trung Dao , Michael Edward Ramon
CPC分类号: H01H59/0009 , B81B3/0086 , H01H1/0094 , H01H49/00
摘要: An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.
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公开(公告)号:US09783411B1
公开(公告)日:2017-10-10
申请号:US15349607
申请日:2016-11-11
发明人: David P. Potasek , Sean Houlihan
CPC分类号: B81B3/0086 , B81B2201/0264 , B81B2207/07 , B81C1/00269 , B81C2201/013 , G01L9/0073
摘要: A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.
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10.
公开(公告)号:US09783409B2
公开(公告)日:2017-10-10
申请号:US14499200
申请日:2014-09-28
申请人: Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
发明人: Ming-Han Tsai , Chih-Ming Sun , Hsin-Hui Hsu
CPC分类号: B81B3/0086
摘要: This invention provides a MEMS device, including: a mass structure having at least one anchor; at least one flexible structure connected with the mass structure at the at least one anchor; a plurality of top electrodes located above the mass structure and forming a top capacitor circuit with the mass structure; and a plurality of bottom electrodes located under the mass structure and forming a bottom capacitor circuit with the mass structure. The projections of the plural top electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor, and the projections of the plural bottom electrodes on the mass structure along a normal direction of the mass structure are located at opposite sides of the anchor. This invention also provides a MEMS compensation structure.
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