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公开(公告)号：US20120266050A1
公开(公告)日：2012-10-18
申请号：US13516053
申请日：2010-12-16
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory, An indication of validity of data stored in each data write location is also maintained, Prior to erasing a block, valid input data is recovered from the or each said group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供了一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保持在存储器中，还保持存储在每个数据写入位置中的数据的有效性的指示。在擦除块之前，有效的输入数据从该或每个 该组在该块中包含写入位置。 然后将恢复的数据重新存储为新的输入数据。
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公开(公告)号：US09176817B2
公开(公告)日：2015-11-03
申请号：US13617571
申请日：2012-09-14
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从包含该块中的写入位置的组中恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
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公开(公告)号：US08904261B2
公开(公告)日：2014-12-02
申请号：US13516053
申请日：2010-12-16
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the each said group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供了一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从包含该块中的写入位置的每个所述组恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
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4.发明申请SOLID-STATE STORAGE SYSTEM WITH PARALLEL ACCESS OF MULTIPLE FLASH/PCM DEVICES 有权具有并行访问多个闪存/ PCM设备的固态存储系统公开(公告)号：US20110131472A1
公开(公告)日：2011-06-02
申请号：US12627364
申请日：2009-11-30
申请人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
发明人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
CPC分类号： G06F11/1028 , G11C29/765
摘要： Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.
摘要翻译： 提供了通过使用容错架构以及用于随机/突发错误校正的一个纠错码（ECC）机制来解决固态驱动器（SSD）中的故障存储集成电路（IC）的问题的系统和方法，以及 L折叠交织机制。 当一个或多个集成电路出现故障并且允许从故障集成电路恢复先前存储的数据并且允许在其他操作集成电路中校正随机/突发错误时，本文描述的系统和方法保持SSD的可操作性。 这些系统和方法用作为备用集成电路处理的全功能/可操作集成电路来代替故障集成电路。 此外，这些系统和方法在最大可实现的读/写数据速率方面提高了I / O性能。
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公开(公告)号：US09037951B2
公开(公告)日：2015-05-19
申请号：US13516627
申请日：2010-12-16
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadas , Thomas Mittelholzer
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadas , Thomas Mittelholzer
CPC分类号： G06F11/1008 , G06F11/1012 , G06F11/1068 , G06F11/108
摘要： Methods and apparatus are provided for controlling data management operations including storage of data in solid state storage of a solid state storage system. Input data is stored in successive groups of data write locations in the solid state storage. Each group comprises a set of write locations in each of a plurality of logical subdivisions of the solid state storage. The input data to be stored in each group is encoded in accordance with first and second linear error correction codes. The encoding is performed by constructing from the input data to be stored in each group a logical array of rows and columns of data symbols. The rows and columns are respectively encoded in accordance with the first and second linear error correction codes to produce an encoded array in which all rows correspond to respective first codewords and columns correspond to respective second codewords.
摘要翻译： 提供了用于控制数据管理操作的方法和装置，包括固态存储系统的固态存储中的数据的存储。 输入数据存储在固态存储器中的连续的数据写入位置组中。 每个组包括在固态存储器的多个逻辑子部分的每一个中的一组写入位置。 要存储在每个组中的输入数据根据第一和第二线性纠错码进行编码。 通过从输入数据中构成数据符号的行和列的逻辑阵列，来构成编码。 行和列分别根据第一和第二线性纠错码编码以产生编码阵列，其中所有行对应于相应的第一码字和列对应于相应的第二码字。
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公开(公告)号：US20130013980A1
公开(公告)日：2013-01-10
申请号：US13617571
申请日：2012-09-14
IPC分类号： H03M13/05
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the or each said group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从该块中包含写入位置的该组或每个所述组恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
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公开(公告)号：US09170933B2
公开(公告)日：2015-10-27
申请号：US13700545
申请日：2011-06-06
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C16/3495
摘要： A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.
摘要翻译： 一种用于对诸如闪速存储器的存储器的单元，页，子页或块进行磨损均衡的方法包括：接收（S10）要写入存储器的单元，页，子页或块的数据块; 在接收到的数据块中计数（S40）多少次给定类型的二进制数据“0”或“1”被写入; 并且分配（S50）在所述存储器的单元，页面，子页面或块之间写入所接收的数据块，以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 “1”计入要写入的数据块中。
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8.发明授权Solid-state storage system with parallel access of multiple flash/PCM devices 有权具有并行访问多个闪存/ PCM设备的固态存储系统公开(公告)号：US08495471B2
公开(公告)日：2013-07-23
申请号：US12627364
申请日：2009-11-30
申请人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
发明人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
IPC分类号： G11C29/00
CPC分类号： G06F11/1028 , G11C29/765
摘要： Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.
摘要翻译： 提供了通过使用容错架构以及用于随机/突发错误校正的一个纠错码（ECC）机制来解决固态驱动器（SSD）中的故障存储集成电路（IC）的问题的系统和方法，以及 L折叠交织机制。 当一个或多个集成电路出现故障并且允许从故障集成电路恢复先前存储的数据并且允许在其他操作集成电路中校正随机/突发错误时，本文描述的系统和方法保持SSD的可操作性。 这些系统和方法用作为备用集成电路处理的全功能/可操作集成电路来代替故障集成电路。 此外，这些系统和方法在最大可实现的读/写数据速率方面提高了I / O性能。
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公开(公告)号：US20130166827A1
公开(公告)日：2013-06-27
申请号：US13700545
申请日：2011-06-06
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C16/3495
摘要： The invention is directed to a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory, the method comprising:—receiving (S10) a chunk of data to be written on a cell or page or sub-page or block of the memory;—counting (S40) in the received chunk of data the number of times a given type of binary data ‘0’ or ‘I’ is to be written; and—distributing (S50) the writing of the received chunk of data amongst cells or pages or sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘I’ counted in the chunk of data to be written.
摘要翻译： 本发明涉及一种用于对诸如闪速存储器的存储器的单元格或页面或子页面或块进行磨损均衡的方法，所述方法包括： - 接收（S10）要写入单元或页面的数据块 或存储器的子页面或块; - 在接收的数据块中记录给定类型的二进制数据“0”或“I”的次数（S40）; （S50）在存储器的单元格或页面或子页面或块之间写入所接收的数据块，以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 或者“我”在要写入的数据块中计数。
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公开(公告)号：US20120260150A1
公开(公告)日：2012-10-11
申请号：US13516627
申请日：2010-12-16
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadas , Thomas Mittelholzer
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadas , Thomas Mittelholzer
CPC分类号： G06F11/1008 , G06F11/1012 , G06F11/1068 , G06F11/108
摘要： Methods and apparatus are provided for controlling data management operations including storage of data in solid state storage of a solid state storage system. Input data is stored in successive groups of data write locations in the solid state storage. Each group comprises a set of write locations in each of a plurality of logical subdivisions of the solid state storage. The input data to be stored in each group is encoded in accordance with first and second linear error correction codes. The encoding is performed by constructing from the input data to be stored in each group a logical array of rows and columns of data symbols. The rows and columns are respectively encoded in accordance with the first and second linear error correction codes to produce an encoded array in which all rows correspond to respective first codewords and columns correspond to respective second codewords.
摘要翻译： 提供了用于控制数据管理操作的方法和装置，包括固态存储系统的固态存储中的数据的存储。 输入数据存储在固态存储器中的连续的数据写入位置组中。 每个组包括在固态存储器的多个逻辑子部分的每一个中的一组写入位置。 要存储在每个组中的输入数据根据第一和第二线性纠错码进行编码。 通过从输入数据中构成数据符号的行和列的逻辑阵列，来构成编码。 行和列分别根据第一和第二线性纠错码编码以产生编码阵列，其中所有行对应于相应的第一码字和列对应于相应的第二码字。
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