-
公开(公告)号：US09176817B2
公开(公告)日：2015-11-03
申请号：US13617571
申请日：2012-09-14
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从包含该块中的写入位置的组中恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
-
公开(公告)号：US09170933B2
公开(公告)日：2015-10-27
申请号：US13700545
申请日：2011-06-06
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C16/3495
摘要： A method for wear-leveling cells, pages, sub-pages or blocks of a memory such as a flash memory includes receiving (S10) a chunk of data to be written on the cell, page, sub-page or block of the memory; counting (S40), in the received chunk of data, a number of times a given type of binary data ‘0’ or ‘1’ is to be written; and distributing (S50) the writing of the received chunk of data among cells, pages, sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘1’ counted in the chunk of data to be written.
摘要翻译： 一种用于对诸如闪速存储器的存储器的单元，页，子页或块进行磨损均衡的方法包括：接收（S10）要写入存储器的单元，页，子页或块的数据块; 在接收到的数据块中计数（S40）多少次给定类型的二进制数据“0”或“1”被写入; 并且分配（S50）在所述存储器的单元，页面，子页面或块之间写入所接收的数据块，以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 “1”计入要写入的数据块中。
-
3.发明授权Solid-state storage system with parallel access of multiple flash/PCM devices 有权具有并行访问多个闪存/ PCM设备的固态存储系统公开(公告)号：US08495471B2
公开(公告)日：2013-07-23
申请号：US12627364
申请日：2009-11-30
申请人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
发明人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
IPC分类号： G11C29/00
CPC分类号： G06F11/1028 , G11C29/765
摘要： Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.
摘要翻译： 提供了通过使用容错架构以及用于随机/突发错误校正的一个纠错码（ECC）机制来解决固态驱动器（SSD）中的故障存储集成电路（IC）的问题的系统和方法，以及 L折叠交织机制。 当一个或多个集成电路出现故障并且允许从故障集成电路恢复先前存储的数据并且允许在其他操作集成电路中校正随机/突发错误时，本文描述的系统和方法保持SSD的可操作性。 这些系统和方法用作为备用集成电路处理的全功能/可操作集成电路来代替故障集成电路。 此外，这些系统和方法在最大可实现的读/写数据速率方面提高了I / O性能。
-
公开(公告)号：US20130166827A1
公开(公告)日：2013-06-27
申请号：US13700545
申请日：2011-06-06
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis , Roman Pletka
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211 , G11C16/3495
摘要： The invention is directed to a method for wear-leveling cells or pages or sub-pages or blocks of a memory such as a flash memory, the method comprising:—receiving (S10) a chunk of data to be written on a cell or page or sub-page or block of the memory;—counting (S40) in the received chunk of data the number of times a given type of binary data ‘0’ or ‘I’ is to be written; and—distributing (S50) the writing of the received chunk of data amongst cells or pages or sub-pages or blocks of the memory such as to wear-level the memory with respect to the number of the given type of binary data ‘0’ or ‘I’ counted in the chunk of data to be written.
摘要翻译： 本发明涉及一种用于对诸如闪速存储器的存储器的单元格或页面或子页面或块进行磨损均衡的方法，所述方法包括： - 接收（S10）要写入单元或页面的数据块 或存储器的子页面或块; - 在接收的数据块中记录给定类型的二进制数据“0”或“I”的次数（S40）; （S50）在存储器的单元格或页面或子页面或块之间写入所接收的数据块，以便相对于给定类型的二进制数据“0”的数量对存储器进行磨损级别 或者“我”在要写入的数据块中计数。
-
公开(公告)号：US20130013980A1
公开(公告)日：2013-01-10
申请号：US13617571
申请日：2012-09-14
IPC分类号： H03M13/05
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the or each said group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从该块中包含写入位置的该组或每个所述组恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
-
公开(公告)号：US08904261B2
公开(公告)日：2014-12-02
申请号：US13516053
申请日：2010-12-16
CPC分类号： G06F11/108 , G06F11/1008 , G06F11/1068 , H03M13/05
摘要： A mechanism is provided for controlling a solid state storage device in which the solid state storage comprises erasable blocks each comprising a plurality of data write locations. Input data is stored in successive groups of data write locations, each group comprising write locations in a set of erasable blocks in each of a plurality of logical subdivisions of the solid state storage. The input data is error correction encoded such that each group contains an error correction code for the input data in that group. Metadata, indicating the location of input data in the solid state storage, is maintained in memory. An indication of validity of data stored in each data write location is also maintained. Prior to erasing a block, valid input data is recovered from the each said group containing write locations in that block. The recovered data is then re-stored as new input data.
摘要翻译： 提供了一种用于控制固态存储装置的机构，其中固态存储器包括每个包括多个数据写入位置的可擦除块。 输入数据被存储在连续的数据写入位置组中，每个组包括在固态存储器的多个逻辑分区中的每一个中的一组可擦除块中的写入位置。 输入数据被纠错编码，使得每个组包含用于该组中的输入数据的纠错码。 指示固态存储器中的输入数据的位置的元数据被保存在存储器中。 还保持了存储在每个数据写入位置中的数据的有效性的指示。 在擦除块之前，从包含该块中的写入位置的每个所述组恢复有效的输入数据。 然后将恢复的数据重新存储为新的输入数据。
-
7.发明申请SOLID-STATE STORAGE SYSTEM WITH PARALLEL ACCESS OF MULTIPLE FLASH/PCM DEVICES 有权具有并行访问多个闪存/ PCM设备的固态存储系统公开(公告)号：US20110131472A1
公开(公告)日：2011-06-02
申请号：US12627364
申请日：2009-11-30
申请人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
发明人： Theodore A. Antonakopoulos , Roy D. Cideciyan , Evangelos S. Eleftheriou , Robert Haas , Xiao-Yu Hu , Ilias Iliadis
CPC分类号： G06F11/1028 , G11C29/765
摘要： Systems and methods are provided that confront the problem of failed storage integrated circuits (ICs) in a solid state drive (SSD) by using a fault-tolerant architecture along with one error correction code (ECC) mechanism for random/burst error corrections and an L-fold interleaving mechanism. The systems and methods described herein keep the SSD operational when one or more integrated circuits fail and allow the recovery of previously stored data from failed integrated circuits and allow random/burst errors to be corrected in other operational integrated circuits. These systems and methods replace the failed integrated circuits with fully functional/operational integrated circuits treated herein as spare integrated circuits. Furthermore, these systems and methods improve I/O performance in terms of maximum achievable read/write data rate.
摘要翻译： 提供了通过使用容错架构以及用于随机/突发错误校正的一个纠错码（ECC）机制来解决固态驱动器（SSD）中的故障存储集成电路（IC）的问题的系统和方法，以及 L折叠交织机制。 当一个或多个集成电路出现故障并且允许从故障集成电路恢复先前存储的数据并且允许在其他操作集成电路中校正随机/突发错误时，本文描述的系统和方法保持SSD的可操作性。 这些系统和方法用作为备用集成电路处理的全功能/可操作集成电路来代替故障集成电路。 此外，这些系统和方法在最大可实现的读/写数据速率方面提高了I / O性能。
-
公开(公告)号：US08495281B2
公开(公告)日：2013-07-23
申请号：US12630991
申请日：2009-12-04
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0616 , G06F3/064 , G06F3/0679 , G06F2212/7211
摘要： A method for intra-block wear leveling within solid-state memory subjected to wear, having a plurality of memory cells includes the step of writing to at least certain ones of the plurality of memory cells, in a non-uniform manner, such as to balance the wear of the at least certain ones of the plurality of memory cells within the solid-state memory, at intra-block level. For example, if a behavior of at least some of the plurality of memory cells is not characterized, then the method may comprise characterizing a behavior of at least some of the plurality of memory cells and writing to at least certain ones of the plurality of memory cells, based on the characterized behavior, and in a non-uniform manner.
摘要翻译： 在具有多个存储单元的固态存储器内部进行具有多个存储单元的固态存储器内的块内损耗均衡的方法包括以非均匀方式写入多个存储单元中的至少某些存储单元的步骤， 在块内级别平衡固态存储器内的多个存储单元中的至少某些存储器单元的磨损。 例如，如果多个存储器单元中的至少一些存储器单元的行为没有被表征，则该方法可以包括表征多个存储器单元中的至少一些的行为，并写入多个存储器中的至少某些存储器 基于表征的行为，并且以不均匀的方式。
-
公开(公告)号：US20110022931A1
公开(公告)日：2011-01-27
申请号：US12835783
申请日：2010-07-14
CPC分类号： G06F11/1068 , G11C16/349 , G11C16/3495
摘要： A computer-implemented method of managing a memory of a non-volatile solid state memory device by balancing write/erase cycles among blocks to level block usage. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device, wherein the error is correctable by error-correcting code; and programming the memory unit according to the monitored occurrence of the error; wherein the step of monitoring the occurrence of an error is carried out for at least one block; and wherein said step of programming comprises wear-leveling the monitored block according the error monitored for the monitored block. A computer system and a computer program-product is also provided.The non-volatile solid state memory device includes: a memory unit having data stored therein; and a controller with a logic for programming the memory unit according to a monitored occurrence of an error during a read operation. The method includes: monitoring an occurrence of an error during a read operation in a memory unit of the device; and programming the memory unit according to the monitored occurrence of the error.
摘要翻译： 一种计算机实现的通过平衡块之间的写入/擦除循环来平衡块使用来管理非易失性固态存储器件的存储器的方法。 该方法包括：在设备的存储器单元中的读取操作期间监视错误的发生，其中可通过纠错码校正错误; 并根据所监视的错误发生来对存储器单元进行编程; 其中，针对至少一个块执行监视错误发生的步骤; 并且其中所述编程步骤包括根据所监视的块监测的误差来磨损所监视的块。 还提供了计算机系统和计算机程序产品。 非易失性固态存储装置包括：具有存储在其中的数据的存储单元; 以及控制器，具有用于根据在读取操作期间监视的错误发生来对存储器单元进行编程的逻辑。 该方法包括：在设备的存储器单元中的读取操作期间监视错误的发生; 并根据监视出现的错误对存储器单元进行编程。
-
公开(公告)号：US20090055681A1
公开(公告)日：2009-02-26
申请号：US11843323
申请日：2007-08-22
申请人： Ajay Dholakia , Ilias Iliadis , Robert Haas , Xiaoyu-Yu Hu , Evangelos S. Eleftheriou , Roman A. Pletka
发明人： Ajay Dholakia , Ilias Iliadis , Robert Haas , Xiaoyu-Yu Hu , Evangelos S. Eleftheriou , Roman A. Pletka
IPC分类号： G06F11/20
CPC分类号： G06F11/1076 , G06F2211/1088
摘要： Exemplary embodiments of the present invention comprise a method for the use of an intra-disk redundancy storage protection operation for the scrubbing of a disk. The method comprises initiating a disk scrubbing operation upon each disk of a plurality of disks that are comprised within a storage disk array, issuing a disk scrubbing command for a predetermined segment of the disks that are comprised within the storage disk array at a predetermined time interval, and identifying an unrecoverable segment on a disk. The method further comprises determining if unrecoverable sectors comprised within the unrecoverable segment can be reconstructed, and reconstructing the unrecoverable sectors of the unrecoverable segment and relocating the segment to a spare storage location on the disk in the event that the segment cannot be reconstructed within its original storage location.
摘要翻译： 本发明的示例性实施例包括一种用于擦除盘的盘内冗余存储保护操作的方法。 该方法包括在包含在存储盘阵列内的多个盘的每个盘上启动磁盘擦除操作，以预定的时间间隔为包含在存储盘阵列内的盘的预定段发出磁盘擦除命令 并且识别磁盘上的不可恢复的段。 所述方法还包括确定是否可以重建包含在不可恢复的段内的不可恢复的扇区，以及在该段不能在其原始帧内重建的情况下，重构不可恢复段的不可恢复扇区并将该段重定位到盘上的备用存储位置 存储位置。
-
-
-
-
-
-
-
-
-
搜索结果
55 条记录 (耗时 0.025 秒)