公开(公告)号：US09633905B2

公开(公告)日：2017-04-25

申请号：US13452516

申请日：2012-04-20

申请人： Ryan Chia-Jen Chen ,  Yih-Ann Lin ,  Chia Tai Lin ,  Chao-Cheng Chen

发明人： Ryan Chia-Jen Chen ,  Yih-Ann Lin ,  Chia Tai Lin ,  Chao-Cheng Chen

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/762

CPC分类号： H01L21/823431 ,  H01L21/3081 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/6681

摘要： A device includes a semiconductor substrate, and a plurality of semiconductor fins parallel to each other, wherein the plurality of semiconductor fins is a portion of the semiconductor substrate. A Shallow Trench Isolation (STI) region is on a side of the plurality of semiconductor fins. The STI region has a top surface and a non-flat bottom surface, wherein the plurality of semiconductor fins is over the top surface of the STI region.

公开(公告)号：US20130277759A1

公开(公告)日：2013-10-24

申请号：US13452516

申请日：2012-04-20

申请人： Ryan Chia-Jen Chen ,  Yih-Ann Lin ,  Chia Tai Lin ,  Chao-Cheng Chen

发明人： Ryan Chia-Jen Chen ,  Yih-Ann Lin ,  Chia Tai Lin ,  Chao-Cheng Chen

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L27/088

CPC分类号： H01L21/823431 ,  H01L21/3081 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/6681

摘要： A device includes a semiconductor substrate, and a plurality of semiconductor fins parallel to each other, wherein the plurality of semiconductor fins is a portion of the semiconductor substrate. A Shallow Trench Isolation (STI) region is on a side of the plurality of semiconductor fins. The STI region has a top surface and a non-flat bottom surface, wherein the plurality of semiconductor fins is over the top surface of the STI region.

摘要翻译： 一种器件包括半导体衬底和彼此平行的多个半导体鳍片，其中多个半导体鳍片是半导体衬底的一部分。 浅沟槽隔离（STI）区域位于多个半导体鳍片的一侧。 STI区域具有顶表面和非平坦底表面，其中多个半导体鳍片在STI区域的顶表面之上。