公开(公告)号：US20120249227A1

公开(公告)日：2012-10-04

申请号：US13350795

申请日：2012-01-15

申请人： Ryo NAKAYAMA ,  Masaki Yoshinaga ,  Yoshitaka Abe ,  Kenji Hirayama ,  Yoshihiro Hayashi

发明人： Ryo NAKAYAMA ,  Masaki Yoshinaga ,  Yoshitaka Abe ,  Kenji Hirayama ,  Yoshihiro Hayashi

IPC分类号： G05F3/02

CPC分类号： G05F3/20

摘要： A voltage level generator circuit comprised of a fixed voltage generator unit for generating a first electrical current in a fixed quantity from a first supply voltage; a first current mirror circuit unit including a first thin-film NMOSFET and a second thin-film NMOSFET and that outputs a second electrical current proportional to the first electrical current; a protective circuit including: a third thin-film NMOSFET and a first thick-film PMOSFET utilized as a grounded gate for protecting the second thin-film NMOSFET, a first diode for preventing inverse current flow to the first supply, and a second diode for preventing the gate-source voltage of the third thin-film NMOSFET from reaching a negative electrical potential; and a second current mirror circuit for outputting a third electrical current proportional to the second electrical current; and a first Zener diode unit for generating a first fixed voltage from a third electrical current.

摘要翻译： 一种电压电平发生器电路，包括：固定电压发生器单元，用于从第一电源电压产生固定量的第一电流; 第一电流镜电路单元，包括第一薄膜NMOSFET和第二薄膜NMOSFET，并且输出与第一电流成比例的第二电流; 保护电路，包括：第三薄膜NMOSFET和用作保护第二薄膜NMOSFET的接地栅极的第一厚膜PMOSFET，用于防止反向电流流向第一电源的第一二极管和用于 防止第三薄膜NMOSFET的栅极 - 源极电压达到负电位; 以及第二电流镜电路，用于输出与第二电流成比例的第三电流; 以及用于从第三电流产生第一固定电压的第一齐纳二极管单元。