摘要:
The present invention provides a new method for producing a structure having a three-dimensional network skeleton. The method includes providing a film including a first material and a second material and removing the second material contained in the film by dry etching. The first material contains a noble metal and is dispersed in the second material.
摘要:
The present invention provides a new method for producing a structure having a three-dimensional network skeleton. The method includes providing a film including a first material and a second material and removing the second material contained in the film by dry etching. The first material contains a noble metal and is dispersed in the second material.
摘要:
In a scintillator used for radiation detection, such as an X-ray CT scanner, a scintillation crystal body having a unidirectional phase separation structure is provided which has a light guide function for crosstalk prevention without using partitions. The phase separation structure includes a first crystal phase and a second crystal phase having a refractive index larger than that of the first crystal phase and which have a first principal surface and a second principal surface, these principal surfaces being not located on the same plane, the first principal surface and the second principal surface have portions to which the second crystal phase is exposed, and a portion of the second crystal phase exposed to the first principal surface and a portion of the second crystal phase exposed to the second principal surface are connected to each other.
摘要:
To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要翻译:为了提供具有相分离结构的纳米尺寸的薄膜结构,对于在两种材料之间可以形成化合物的情况是有效的。 由除了Si和Ge之外的元素A和Si(Si)1-n(其中0 <= n <1)之间的元素A之间的化合物的第一元件构成的结构, 以及包含元素A和Si N 1-n N(其中0 <= n <= 1)之一的第二元件,其中第一元件和 第二构件是形成在基板上的柱状构件,其侧面被另一构件包围,长轴方向上的平均直径D1的比D1 / Ds相对于短轴方向的平均直径Ds 柱状构件的截面形状小于5,元素A为Li,Na,Mg,K,Ca,Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Rb,Sr ,Y,Zr,Nb,Mo,Ru,Rh,Pd,Cs,Ba,La,Hf,Ta,W,Re,Os,Ir,Pt,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho ,Er,Tm,Yb,Lu和B.
摘要:
Provided is a scintillator used for detecting radiation in an X-ray CT scanner or the like, the scintillator having a unidirectional phase separation structure having an optical waveguide function, which eliminates the need of formation of partition walls for preventing crosstalks. The scintillator has the phase separation structure including: a first crystal phase including multiple columnar crystals having unidirectionality; and a second crystal phase filling space on the side of the first crystal phase. The second crystal phase includes a material represented by Cs3Cu2[XaY1-a]5, where X and Y are elements which are different from each other and which are selected from the group consisting of I, Br, and Cl, and 0≦a≦1 is satisfied.
摘要翻译:提供了用于检测X射线CT扫描仪等中的辐射的闪烁体,该闪烁体具有具有光波导功能的单向相分离结构,其消除了形成用于防止串扰的分隔壁的需要。 闪烁体具有相分离结构,包括:包含具有单向的多个柱状晶体的第一晶相; 以及在第一结晶相侧的第二晶相填充空间。 第二结晶相包括由Cs 3 Cu 2 [X y Y 1-a] 5表示的材料,其中X和Y是彼此不同的元素,它们选自I,Br和Cl,0和nlE; a&nlE; 1满足。
摘要:
Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.
摘要:
A position detector includes a photodetector having photodetecting elements; and a scintillator crystal having uniaxial optical anisotropy. The scintillator crystal is continuous in a uniaxial direction, is disposed on the photodetector such that the uniaxial direction is not perpendicular to the normal to a photodetecting surface, and has a length at least three times the pitch of the photodetecting elements. The uniaxial anisotropy allows at least 4% of scintillation light emitted from a region farthest above the photodetecting surface to reach the photodetecting elements, and allows from 4% to 35% of scintillation light emitted from a region closest to the photodetecting surface to reach the photodetecting elements.
摘要:
A method of producing a mold having an uneven structure and a mold for an optical element are provided. The method includes forming on a nickel substrate a mixed film using nickel and a material which phase separates from nickel simultaneously, the mixed film including a plurality of cylinders including nickel as a component thereof and a matrix region including the material which phase separates from nickel as a component thereof and surrounding the plurality of cylinders; and removing the matrix portion from the mixed film by etching to give a mold including nickel or a nickel alloy. The uneven structure is disposed in plurality on the substrate, and a pitch of the uneven structure is within a range of 30 nm or more and 500 nm or less and a depth of the uneven structure is within a range of 100 nm or more.
摘要:
A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between the neighboring first columnar scintillators and which are spaced from the first columnar scintillators, and photodetecting elements overlapping with the first columnar scintillators includes a step of preparing the substrate such that the substrate has a surface having an uneven section having protruding portions and a plurality of spaced flat sections surrounded by the uneven section and also includes a step of forming the first columnar scintillators and the second columnar scintillators on the flat sections and the protruding portions, respectively, by depositing a scintillator material on the substrate having the uneven section and the flat sections. The uneven section has recessed portions and satisfies the following inequality: h/d≧1 where h is the depth of each recessed portion and d is the distance between the protruding portions.
摘要:
To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要翻译:为了提供具有相分离结构的纳米尺寸的薄膜结构,对于在两种材料之间可以形成化合物的情况是有效的。 由除了Si和Ge之外的元素A和Si(Si)1-n(其中0 <= n <1)之间的元素A之间的化合物的第一元件构成的结构, 以及包含元素A和Si N 1-n N(其中0 <= n <= 1)之一的第二元件,其中第一元件和 第二构件是形成在基板上的柱状构件,其侧面被另一构件包围,长轴方向上的平均直径D1的比D1 / Ds相对于短轴方向的平均直径Ds 柱状构件的横截面形状小于5,元素A为Li,Na,Mg,K,Ca,Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Rb,Sr ,Y,Zr,Nb,Mo,Ru,Rh,Pd,Cs,Ba,La,Hf,Ta,W,Re,Os,Ir,Pt,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho ,Er,Tm,Yb,Lu和B.