公开(公告)号：US20060231923A1

公开(公告)日：2006-10-19

申请号：US11455678

申请日：2006-06-20

申请人： Ryota Yamamoto ,  Masayuki Furumiya ,  Hiraoki Ohkubo ,  Yasutaka Nakashiba

发明人： Ryota Yamamoto ,  Masayuki Furumiya ,  Hiraoki Ohkubo ,  Yasutaka Nakashiba

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L28/10 ,  H01L21/76838 ,  H01L23/5227 ,  H01L23/53228 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed are an inductor for a semiconductor integrated circuit, which provides a wider cross-sectional area, significantly reduces the resistance to improve the Q value and has a highly uniform film thickness, and a method of fabricating the inductor. A spiral inductor is formed on a topmost interconnection layer of a multilayer interconnection layer formed by a damascene method. This inductor is formed by patterning a barrier metal layer on an insulation film, on which a topmost interconnection is formed, in such a way that the barrier metal layer contacts the topmost interconnection, then forming a protective insulation film on an entire surface of the barrier metal layer, forming an opening in that portion of the protective insulation film which lies over the barrier metal layer, forming a thick Cu film with the barrier metal layer serving as a plating electrode, and performing wet etching of the Cu film. This process can allow the inductor to be so formed as to be thick and have a wide line width.