公开(公告)号：US20250089529A1

公开(公告)日：2025-03-13

申请号：US18665927

申请日：2024-05-16

Applicant: Samsung Display Co., LTD.

Inventor： Sungyong KANG ,  Seulgi KIM ,  Doohyun KIM ,  Yejin KIM

IPC: H10K59/80 ,  H10K59/12

Abstract: Provided is a method of manufacturing a display apparatus including, in a display panel including a central area and a peripheral area surrounding the central area, arranging a first adhesive material layer along the peripheral area of the display panel, arranging a second adhesive material layer such that the second adhesive material layer overlaps the central area and a first portion of the first adhesive material layer, and arranging a third adhesive material layer on a second portion of the first adhesive material layer opposite to the first portion, wherein the third adhesive material layer is apart from the second adhesive material layer.

公开(公告)号：US20170330924A1

公开(公告)日：2017-11-16

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon KIM ,  Shinhyuk YANG ,  Doohyun KIM ,  Kwangsoo LEE ,  Inyoung JUNG

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/7869 ,  H01L51/5203

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.