公开(公告)号：US20240122002A1

公开(公告)日：2024-04-11

申请号：US18214332

申请日：2023-06-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Inyoung JUNG

IPC: H10K59/131 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/131 ,  H10K59/1201 ,  H10K71/861

Abstract: A display device includes a substrate, a first wiring disposed on the substrate and extending in a first direction, an inter-insulating layer disposed on the first wiring, a 2-1st wiring disposed on the inter-insulating layer and extending in a second direction crossing the first direction, a 2-2nd wiring disposed on the inter-insulating layer, disconnected from the 2-1st wiring, and crossing the first wiring, a 2-3rd wiring disposed on the inter-insulating layer, and disconnected from the 2-2nd wiring, a first insulating layer which is disposed on the 2-1st to the 2-3rd wirings and in which a first through-hole and a second through-hole are defined, the first through-hole exposing a portion of the 2-1st wiring, and the second through-hole exposing a portion of the 2-3rd wiring, and a first pixel electrode connected to the 2-1st wiring through the first through-hole, and connected to the 2-3rd wiring through the second through-hole.

公开(公告)号：US20170330924A1

公开(公告)日：2017-11-16

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon KIM ,  Shinhyuk YANG ,  Doohyun KIM ,  Kwangsoo LEE ,  Inyoung JUNG

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/7869 ,  H01L51/5203

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.