公开(公告)号：US20160155858A1

公开(公告)日：2016-06-02

申请号：US14718336

申请日：2015-05-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hee jun YOO ,  Sang Ho PARK ,  Joung-Keun PARK ,  Ki Wan AHN ,  Joo Sun YOON ,  Seung Min LEE ,  Yong Jae JANG ,  Jae Hyuk JANG ,  Kwang Young CHOI ,  Jung Hyun KIM

IPC: H01L29/786 ,  H01L27/32

CPC classification number: H01L29/78648 ,  H01L27/0705 ,  H01L29/41733 ,  H01L29/78672 ,  H01L29/78696

Abstract: A thin film transistor including a substrate; a first gate electrode on the substrate; a first insulating layer covering the substrate and the first gate electrode; a semiconductor on the first insulating layer and overlapping the first gate electrode; a second insulating layer covering the first insulating layer and the semiconductor; a second gate electrode on the second insulating layer and crossing the first gate electrode in plane; a third insulating layer covering the second gate electrode and the second insulating layer; a first source electrode and a first drain electrode on the third insulating layer and connected to the semiconductor; and a second source electrode and a second drain electrode on a same layer as the first source electrode and the first drain electrode and connected to the semiconductor.

Abstract translation: 一种薄膜晶体管，包括基板; 基板上的第一栅电极; 覆盖所述基板和所述第一栅电极的第一绝缘层; 在所述第一绝缘层上的半导体，并与所述第一栅电极重叠; 覆盖所述第一绝缘层和所述半导体的第二绝缘层; 在第二绝缘层上的第二栅电极，并与第一栅电极平行; 覆盖所述第二栅电极和所述第二绝缘层的第三绝缘层; 在第三绝缘层上的第一源电极和第一漏电极，并与半导体连接; 以及与第一源电极和第一漏极电极相同的层上的第二源极和第二漏极，并与半导体连接。