公开(公告)号：US10128278B2

公开(公告)日：2018-11-13

申请号：US14997357

申请日：2016-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Yong Kim ,  Woong-Ki Jeon ,  Hyun-Jin Kim ,  Jean-Ho Song

IPC: H01L27/12 ,  H01L21/311 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor substrate includes a switching element comprising a gate electrode electrically connected to a gate line extending in a first direction, an active pattern overlapping with the gate electrode, a source electrode disposed on the active pattern and electrically connected to a data line extending in a second direction crossing the first direction, and a drain electrode spaced apart from the source electrode. The thin film transistor substrate further includes an organic layer disposed on the switching element, a first electrode disposed on the organic layer, and a second electrode overlapping with the first electrode, and electrically connected to the drain electrode. A thickness of the second electrode is thicker than a thickness of the first electrode.