公开(公告)号：US20170294520A1

公开(公告)日：2017-10-12

申请号：US15353925

申请日：2016-11-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： ILJEONG LEE ,  Youngwoo Park ,  Wangwoo Lee

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3262 ,  H01L29/401 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate including a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer including a channel region, and a source region and a drain region at first and second sides of the channel region; a gate electrode disposed on the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a first insulating layer disposed on the substrate, the first insulating layer exposes the upper surface of the gate electrode and surrounds the gate electrode.

公开(公告)号：US20220123122A1

公开(公告)日：2022-04-21

申请号：US17564456

申请日：2021-12-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： ILJEONG LEE ,  YOUNGWOO PARK ,  WANGWOO LEE

IPC: H01L29/423 ,  H01L27/12 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor substrate includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a channel region, a source region and a drain region. The thin film transistor further includes a gate electrode disposed on the semiconductor layer and that includes a lower surface and an upper surface. The thin film transistor includes a gate insulating layer disposed between the gate electrode and the semiconductor layer, and a first insulating layer disposed on the substrate. The first insulating layer exposes the upper surface of the gate electrode and surrounds the gate electrode. The gate electrode may have a shape in which the width of an upper surface thereof is greater than the width of a lower surface thereof.

公开(公告)号：US20160379562A1

公开(公告)日：2016-12-29

申请号：US15004472

申请日：2016-01-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JUWON YOON ,  SEWAN SON ,  ILJEONG LEE ,  JISEON LEE ,  DEUKMYUNG JI

IPC: G09G3/3233 ,  H01L29/423 ,  H01L29/786

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2320/0214 ,  H01L29/42384 ,  H01L29/78645

Abstract: An organic light-emitting diode (OLED) display apparatus is provided. The OLED display apparatus includes a substrate, an initialization voltage line, a first thin film transistor (TFT) including an active layer. The initialization voltage line transmits an initialization voltage. The first thin film transistor (TFT) includes an active layer, a gate electrode, and an auxiliary gate electrode. The active layer is disposed on the substrate and includes a source region, a channel region, and a drain region. The gate electrode is disposed on the channel region. The auxiliary gate electrode is disposed on the gate electrode on a boundary between the channel region and the drain region. The voltage application electrode is disposed on the auxiliary gate electrode and is connected to the initialization voltage line and the auxiliary gate electrode.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置。 OLED显示装置包括基板，初始化电压线，包括有源层的第一薄膜晶体管（TFT）。 初始化电压线传输初始化电压。 第一薄膜晶体管（TFT）包括有源层，栅电极和辅助栅电极。 有源层设置在衬底上并且包括源极区，沟道区和漏极区。 栅电极设置在沟道区上。 辅助栅电极设置在沟道区和漏区之间的边界上的栅电极上。 电压施加电极设置在辅助栅电极上并连接到初始化电压线和辅助栅电极。