公开(公告)号：US20150047468A1

公开(公告)日：2015-02-19

申请号：US14196576

申请日：2014-03-04

Applicant: Korea Advanced Institute of Science and Technology ,  Samsung Display Co., Ltd.

Inventor： Hyun-Woo KOO ,  Tae-Woong KIM ,  Jung-Yong LEE ,  Jaemin LEE ,  Seonju JEONG

IPC: B22F9/24 ,  C22C5/06

CPC classification number: B22F9/24 ,  B22F1/0025 ,  B22F2301/255 ,  B22F2304/054 ,  C22C5/06

Abstract: A method of manufacturing silver nanowires includes: forming a first solution including a dispersion stabilizer and a polyol; forming a second solution including a dispersion stabilizer, a silver precursor, a halogen-ion donor, deionized water, and the polyol; forming a third solution by adding the second solution to the first solution; heating the third solution from a first temperature to a second temperature; and forming silver nanowires by maintaining the third solution at the second temperature.

Abstract translation: 制造银纳米线的方法包括：形成包含分散稳定剂和多元醇的第一溶液; 形成包含分散稳定剂，银前体，卤素离子供体，去离子水和多元醇的第二溶液; 通过将第二溶液添加到第一溶液中形成第三溶液; 将第三溶液从第一温度加热到第二温度; 并通过将第三溶液保持在第二温度而形成银纳米线。

公开(公告)号：US20230245624A1

公开(公告)日：2023-08-03

申请号：US18114161

申请日：2023-02-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaemin LEE ,  Sooin YOU ,  Youngsun JANG ,  Hyunggi JUNG ,  Soonchang YEON ,  Hyungtae JUNG

IPC: G09G3/3275

CPC classification number: G09G3/3275 ,  G09G2300/0842 ,  G09G2310/0272

Abstract: A display device includes a driving voltage line and a plurality of data lines extending in a first direction, a first driving transistor electrically connected to the driving voltage line, a first switching transistor electrically connected to the first driving transistor and including a first switching semiconductor layer extending in a second direction crossing the first direction and a first switching gate electrode overlapping a channel region of the first switching semiconductor layer, and a first storage capacitor electrically connected to the first driving transistor and the first switching transistor, where the first switching semiconductor layer is electrically connected to a first data line, the first switching semiconductor layer crosses a second data line between the channel region and the first data line, and a crossing region of an edge of the first switching semiconductor layer and an edge of the second data line overlaps a first protection layer.