公开(公告)号：US20240023373A1

公开(公告)日：2024-01-18

申请号：US18311600

申请日：2023-05-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kihwan KIM ,  Jeongmoo KWON ,  Beom Jin KIM ,  Sangik OH ,  Bumsuk LEE ,  Hyunggi JUNG ,  Hyungtae JUNG

IPC: H10K59/121 ,  G09G3/3266 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  G09G3/3266 ,  H10K59/131 ,  G09G2310/08

Abstract: Display device include pixels having a first transistor including a control electrode connected to a first node, a first electrode receiving a first voltage, and a second electrode connected to a second node, a second transistor including a first electrode connected to a data line, a second electrode connected to the first node, and a control electrode connected to a first scan line, a first-first transistor including a control electrode connected to a first-first node, a first electrode receiving the first voltage, and a second electrode connected to the second node, and a second-first transistor including a first electrode connected to the data line, a second electrode connected to the first-first node, and a control electrode connected to a second scan line. An initialization voltage is applied to the second node. First and second scan signals are applied to the first and second scan lines in first and second frames.

公开(公告)号：US20230245624A1

公开(公告)日：2023-08-03

申请号：US18114161

申请日：2023-02-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaemin LEE ,  Sooin YOU ,  Youngsun JANG ,  Hyunggi JUNG ,  Soonchang YEON ,  Hyungtae JUNG

IPC: G09G3/3275

CPC classification number: G09G3/3275 ,  G09G2300/0842 ,  G09G2310/0272

Abstract: A display device includes a driving voltage line and a plurality of data lines extending in a first direction, a first driving transistor electrically connected to the driving voltage line, a first switching transistor electrically connected to the first driving transistor and including a first switching semiconductor layer extending in a second direction crossing the first direction and a first switching gate electrode overlapping a channel region of the first switching semiconductor layer, and a first storage capacitor electrically connected to the first driving transistor and the first switching transistor, where the first switching semiconductor layer is electrically connected to a first data line, the first switching semiconductor layer crosses a second data line between the channel region and the first data line, and a crossing region of an edge of the first switching semiconductor layer and an edge of the second data line overlaps a first protection layer.