公开(公告)号：US09502579B2

公开(公告)日：2016-11-22

申请号：US14717734

申请日：2015-05-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bong-Kyun Kim ,  Seung-Ho Yoon ,  Shin-Il Choi

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L23/532 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

Abstract translation: 薄膜晶体管基板包括设置在基板上的栅电极; 半导体层，其设置在与所述栅电极部分重叠并且包括氧化物半导体材料的所述基板上; 以及设置在半导体层上的源电极和漏电极，其中漏电极与源电极间隔开。 源电极和漏极各自包括阻挡层和主布线层，主布线层设置在阻挡层上，阻挡层包括设置在半导体层上的第一金属层和第二金属层 设置在第一金属层上。

公开(公告)号：US09837550B2

公开(公告)日：2017-12-05

申请号：US15335897

申请日：2016-10-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bong-Kyun Kim ,  Seung-Ho Yoon ,  Shin-Il Choi

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L29/66 ,  H01L23/532 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/441 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

公开(公告)号：US09871144B2

公开(公告)日：2018-01-16

申请号：US15357273

申请日：2016-11-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bong-Kyun Kim ,  Seung-Ho Yoon ,  Shin-Il Choi

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L29/66 ,  H01L23/532 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/441 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/53228 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.