公开(公告)号：US11329117B2

公开(公告)日：2022-05-10

申请号：US16877735

申请日：2020-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongsung Lee ,  Jihwan Kim ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee ,  Yeonhee Jeon ,  Jonghoon Choi ,  Byungkyu Son ,  Seunghyun Jang

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

公开(公告)号：US20210013281A1

公开(公告)日：2021-01-14

申请号：US16877735

申请日：2020-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongsung Lee ,  Jihwan Kim ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee ,  Yeonhee Jeon ,  Jonghoon Choi ,  Byungkyu Son ,  Seunghyun Jang

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.